Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.
Power MOS V® is a new generation of high voltage N-Channel enhancement ode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS V® lso achieves faster switching speeds through optimized gate layout.
APT5010JVFR Maximum Ratings
Symbol
Parameter
APT30M40JVR
UNIT
VDSS
Drain-Source Voltage
500
Volts
ID
Continuous Drain Current @ TC = 25°C
44
Amps
IDM
Pulsed Drain Current
176
VGS
Gate-Source Voltage Continuous
±30
Volts
VGSM
Gate-Source Voltage Transient
±40
PD
Total Power Dissipation @ TC = 25°C
450
Watts
Linear Derating Factor
3.6
W/°C
TJ,TSTG
Operating and Storage Junction Temperature Range
-55 to 150
TL
Lead Temperature: 0.063" from Case for 10 Sec.
300
IAR
Avalanche Current (Repetitive and Non-Repetitive)
44
Amps
EAR
Repetitive Avalanche Energy
50
mJ
EAS
Single Pulse Avalanche Energy
2500
APT5010JVFR Features
• Fast Recovery Body Diode • 100% Avalanche Tested • Lower Leakage • Popular SOT-227 Package • Faster Switching