APT5010LFLL, APT5010LLC, APT5010LLL Selling Leads, Datasheet
MFG:APT Package Cooled:APT D/C:07+
APT5010LFLL, APT5010LLC, APT5010LLL Datasheet download
Part Number: APT5010LFLL
MFG: APT
Package Cooled: APT
D/C: 07+
APT5010LFLL, APT5010LLC, APT5010LLL
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Info of APT5010LFLL
Info of APT5010LLC
Info of APT5010LLL
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About APT5010LFLL
PDF/DataSheet Download
Datasheet: APT5010LFLL
File Size: 65369 KB
Manufacturer: ADPOW [Advanced Power Technology]
Download : Click here to Download
About APT5010LLC
PDF/DataSheet Download
Datasheet: APT5010LLC
File Size: 74802 KB
Manufacturer: ADPOW [Advanced Power Technology]
Download : Click here to Download
About APT5010LLL
PDF/DataSheet Download
Datasheet: APT5010LLL
File Size: 70486 KB
Manufacturer: ADPOW [Advanced Power Technology]
Download : Click here to Download
APT5010LFLL General Description
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure.
APT5010LFLL Maximum Ratings
| Symbol | Parameter | APT5010 | UNIT |
| VDSS | Drain-Source Voltage | 500 | Volts |
| ID | Continuous Drain Current @ TC = 25°C | 46 | Amps |
| IDM | Pulsed Drain Current | 184 | |
| VGS | Gate-Source Voltage Continuous | ±30 | Volts |
| VGSM | Gate-Source Voltage Transient | ±40 | |
| PD | Total Power Dissipation @ TC = 25°C | 500 | Watts |
| Linear Derating Factor | 4.0 | W/°C | |
| TJ,TSTG | Operating and Storage Junction Temperature Range | -55 to 150 | °C |
| TL | Lead Temperature: 0.063" from Case for 10 Sec | 300 | |
| IAR | Avalanche Current (Repetitive and Non-Repetitive) | 46 | Amps |
| EAR | Repetitive Avalanche Energy | 50 | mJ |
| EAS | Single Pulse Avalanche Energy | 1800 |
APT5010LLL General Description
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure.
APT5010LLL Maximum Ratings
| Symbol | Parameter | APT5010 | UNIT |
| VDSS | Drain-Source Voltage | 500 | Volts |
| ID | Continuous Drain Current @ TC = 25°C | 46 | Amps |
| IDM | Pulsed Drain Current | 184 | |
| VGS | Gate-Source Voltage Continuous | ±30 | Volts |
| VGSM | Gate-Source Voltage Transient | ±40 | |
| PD | Total Power Dissipation @ TC = 25°C | 500 | Watts |
| Linear Derating Factor | 4.0 | W/°C | |
| TJ,TSTG | Operating and Storage Junction Temperature Range | -55 to 150 | °C |
| TL | Lead Temperature: 0.063" from Case for 10 Sec | 300 | |
| IAR | Avalanche Current (Repetitive and Non-Repetitive) | 46 | Amps |
| EAR | Repetitive Avalanche Energy | 50 | mJ |
| EAS | Single Pulse Avalanche Energy | 1800 |
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