APT5017BVR, APT5017SLC, APT5017SVR Selling Leads, Datasheet
MFG:APT Package Cooled:APT D/C:06+
APT5017BVR, APT5017SLC, APT5017SVR Datasheet download
Part Number: APT5017BVR
MFG: APT
Package Cooled: APT
D/C: 06+
APT5017BVR, APT5017SLC, APT5017SVR
- Table of contents:
Info of APT5017BVR
Info of APT5017SLC
Info of APT5017SVR
Attentive hint
Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.
Top Sellers:
TOP
About APT5017BVR
PDF/DataSheet Download
Datasheet: APT5017BVR
File Size: 61646 KB
Manufacturer: ADPOW [Advanced Power Technology]
Download : Click here to Download
About APT5017SLC
PDF/DataSheet Download
Datasheet: APT5017SLC
File Size: 36623 KB
Manufacturer: ADPOW [Advanced Power Technology]
Download : Click here to Download
About APT5017SVR
PDF/DataSheet Download
Datasheet: APT5017SVR
File Size: 65214 KB
Manufacturer: ADPOW [Advanced Power Technology]
Download : Click here to Download
APT5017BVR General Description
Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.
APT5017BVR Maximum Ratings
| Symbol | Parameter |
APT5017BVR |
UNIT |
| VDSS | Drain-Source Voltage |
500 |
Volts |
| ID | Continuous Drain Current @ TC = 25 |
30 |
Amps |
| IDM | Pulsed Drain Current |
120 | |
| VGS | Gate-Source Voltage Continuous |
±30 |
Volts |
| VGSM | Gate-Source Voltage Transient |
±40 | |
| PD | Total Power Dissipation @ TC = 25 |
370 |
Watts |
| Linear Derating Factor |
2.96 |
W/ | |
| TJ,TSTG | Operating and StorageTemperature Range |
-55 to 150 |
|
| TL | Lead Temperature: 0.063" from Case for 10 Sec. |
300 | |
| IAR | Avalanche Current(Repetitive and Non-Repetitive) |
30 |
Amps |
| EAR | Repetitive Avalanche Energy |
30 |
mJ |
| EAS | Single Pulse Avalanche Energy |
1300 |
APT5017BVR Features
• Faster Switching
• 100% Avalanche Tested
• Lower Leakage
• Popular TO-247 Package
• 100% Avalanche Tested
• Lower Leakage
• Popular TO-247 Package
APT5017SLC General Description
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout,delivers exceptionally fast switching speeds.
APT5017SLC Maximum Ratings
| Symbol | Parameter |
APT5017 |
UNIT |
| VDSS | Drain-Source Voltage |
500 |
Volts |
| ID | Continuous Drain Current @ TC = 25 |
30 |
Amps |
| IDM | Pulsed Drain Current |
120 | |
| VGS | Gate-Source Voltage Continuous |
±30 |
Volts |
| VGSM | Gate-Source Voltage Transient |
±40 | |
| PD | Total Power Dissipation @ TC = 25 |
370 |
Watts |
| Linear Derating Factor |
3.96 |
W/ | |
| TJ,TSTG | Operating and StorageTemperature Range |
-55 to 150 |
|
| TL | Lead Temperature: 0.063" from Case for 10 Sec. |
300 | |
| IAR | Avalanche Current(Repetitive and Non-Repetitive) |
30 |
Amps |
| EAR | Repetitive Avalanche Energy |
30 |
mJ |
| EAS | Single Pulse Avalanche Energy |
1300 |
APT5017SLC Features
• Identical Specifications: TO-247 or Surface Mount D3PAK Package
• Lower Gate Charge & Capacitance
• Easier To Drive
• 100% Avalanche Tested
• Faster switching
• Lower Gate Charge & Capacitance
• Easier To Drive
• 100% Avalanche Tested
• Faster switching
APT5017SVR General Description
Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.
APT5017SVR Maximum Ratings
| Symbol | Parameter |
APT5017SVR |
UNIT |
| VDSS | Drain-Source Voltage |
500 |
Volts |
| ID | Continuous Drain Current @ TC = 25 |
30 |
Amps |
| IDM | Pulsed Drain Current |
120 | |
| VGS | Gate-Source Voltage Continuous |
±30 |
Volts |
| VGSM | Gate-Source Voltage Transient |
±40 | |
| PD | Total Power Dissipation @ TC = 25 |
370 |
Watts |
| Linear Derating Factor |
2.96 |
W/ | |
| TJ,TSTG | Operating and StorageTemperature Range |
-55 to 150 |
|
| TL | Lead Temperature: 0.063" from Case for 10 Sec. |
300 | |
| IAR | Avalanche Current(Repetitive and Non-Repetitive) |
30 |
Amps |
| EAR | Repetitive Avalanche Energy |
30 |
mJ |
| EAS | Single Pulse Avalanche Energy |
1300 |
APT5017SVR Features
• Faster Switching
• 100% Avalanche Tested
• Lower Leakage
• Surface Mount D3PAK Package
• 100% Avalanche Tested
• Lower Leakage
• Surface Mount D3PAK Package
MT58L64L18CT-10
Price: 4-6 USD
MT58L64L18CT-10 TQFP100
DL-7140-211M
Price: 5-6.5 USD
DL-7140-211M laser tube
74LVC74APG
Price: 4-5 USD
74LVC74APG - IC FLIP FLOP D-Type POS-EDG DUAL 14TSSOP
CY28346ZI-2
Price: 6.5-8 USD
CYPRESS - Clock Synthesizer with Differential CPU Outputs
PI5V330QEX
Price: 0.284-0.286 USD
PI5V330QEX Pericom Multiplexer Switch ICs
BSM300GA120DN2
Price: 1-2 USD
IGBT power module, Single switch, 1200 V, Collector-emitter voltage, 430A
SVA150XG04TB
Price: 1-2 USD
a-Si TFT-LCD, NEC, 228.096Hmm, 560V
PC354N1
Price: 0.124-0.2 USD
PC354N1T - Mini-flat Package, AC Input Type Photocoupler - Sharp Electrionic Components
RL1210JR-070R22L
Price: 0.177-0.178 USD
RL1210JR51-XX-BL - Thick Film Chip Resistor Low Ohmic - TAITRON Components Incorporated
STPS140A
Price: 0.053-0.055 USD
STPS140A - POWER SCHOTTKY RECTIFIER - STMicroelectronics
STA013
Price: 1.45-1.5 USD
STA013 - MPEG 2.5 LAYER III AUDIO DECODER - STMicroelectronics
SMBJ5347B
Price: 0.073-0.075 USD
SMBJ5347B - 5 Watt Surface Mount Silicon Zener Diodes - Micro Commercial Components
