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APT5018SLL, APT5019HVR, APT5020

Table of contents:
Info of APT5018SLL
Info of APT5019HVR
Info of APT5020

APT5018SLL, APT5019HVR, APT5020 Selling Leads, Datasheet

MFG:APT Package Cooled:APT D/C:07+

APT5018SLL, APT5019HVR, APT5020 Datasheet download

Five Points

Part Number: APT5018SLL

MFG: APT

Package Cooled: APT

D/C: 07+

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APT5018SLL Maximum Ratings

Symbol	Parameter	APT5018	UNIT
V_DSS	Drain-Source Voltage	500	Volts
I_D	Continuous Drain Current @ TC = 25°C	27	Amps
I_DM	Pulsed Drain Current 1	108	Amps
V_GS	Gate-Source Voltage Continuous	±30	Volts
V_GSM	Gate-Source Voltage Transient	±40	Volts
P_D	Total Power Dissipation @ TC = 25°C	300	Watts
P_D	Linear Derating Factor	2.4	W/°C
T_J,T_STG	Operating and Storage Junction Temperature Range	-55 to 150	°C
T_L	Lead Temperature: 0.063" from Case for 10 Sec.	300	°C
I_AR	Avalanche Current 1 (Repetitive and Non-Repetitive)	27	Amps
EA_R	Repetitive Avalanche Energy 1	30	mJ
E_AS	Single Pulse Avalanche Energy 4	1210	mJ

APT5019HVR General Description

Power MOS V^® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V^® also achieves faster switching speeds through optimized gate layout.

APT5019HVR Maximum Ratings

Symbol	Parameter	APT5019HVR	UNIT
V_DSS	Drain-Source Voltage	500	Volts
I_D	Continuous Drain Current @ T_C = 25	24	Amps
I_DM	Pulsed Drain Current	96	Amps
V_GS	Gate-Source Voltage Continuous	±30	Volts
V_GSM	Gate-Source Voltage Transient	±40	Volts
P_D	Total Power Dissipation @ T_C = 25	250	Watts
P_D	Linear Derating Factor	2.0	W/
T_J,T_STG	Operating and StorageTemperature Range	-55 to 150
T_L	Lead Temperature: 0.063" from Case for 10 Sec.	300
I_AR	Avalanche Current(Repetitive and Non-Repetitive)	24	Amps
E_AR	Repetitive Avalanche Energy	30	mJ
E_AS	Single Pulse Avalanche Energy	1300	mJ

APT5019HVR Features

• Faster Switching
• 100% Avalanche Tested
• Lower Leakage
• Popular TO-258 Package

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