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Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. Low gate charge simplifies gate drive design and minimizes losses.
APT50GN60B Maximum Ratings
Symbol
Parameter
Value
Unit
VCES
Collector-Emitter Voltage
600
Volts
VGE
Gate-Emitter Voltage
± 30
Volts
IC
Continuous Collector Current @ TC = 25°C
107
Amps
IC
Continuous Collector Current @ TC = 110°C
64
Amps
ICM
Pulsed Collector Current 1
150
Amps
SSOA
Switching Safe Operating Area @ TJ = 150°C
150A @ 1200V
PD
Total Power Dissipation
366
Watts
TL
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
300
°C
Tj Tstg
Operating and Storage Junction Temperature Range
-55 to 175
°C
APT50GN60B Features
• 600V Field Stop • Trench Gate: Low VCE(on) • Easy Paralleling • 6s Short Circuit Capability • 175°C Rated
APT50GN60B Typical Application
Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS