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APT50GN60B, APT50GN60BDQ2, APT50GN60BDQ2G

APT50GN60B, APT50GN60BDQ2, APT50GN60BDQ2G Selling Leads, Datasheet

MFG:Microsemi-PPG  Category:Discrete Semiconductor Products  Package Cooled:TO-247 [B]  D/C:08+/09+

APT50GN60BDQ2G Picture

APT50GN60B, APT50GN60BDQ2, APT50GN60BDQ2G Datasheet download

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Part Number: APT50GN60BDQ2G

Category: Discrete Semiconductor Products

MFG: Microsemi-PPG

Package Cooled: TO-247 [B]

D/C: 08+/09+

Description: IGBT 107A 600V TO-247

 

 
 
 
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APT50GN60B Suppliers

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  • APT1001RBN

  • Vendor: APT D/C: 05+& Qty: 247  Adddate: 2024-05-08
  • Inquire Now
  • RUIFENG   China
    Contact: Ms.Miss Lin  
    Tel: 086-0755-23815723
    Fax: 086-0755-23815723
    (1)

About APT50GN60B

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Datasheet: APT50GN60B

File Size: 301866 KB

Manufacturer: ADPOW

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APT50GN60BDQ2 Suppliers

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  • APT1001RBN

  • Vendor: APT D/C: 05+& Qty: 247  Adddate: 2024-05-08
  • Inquire Now
  • RUIFENG   China
    Contact: Ms.Miss Lin  
    Tel: 086-0755-23815723
    Fax: 086-0755-23815723
    (1)

About APT1001

PDF/DataSheet Download

Datasheet: APT1001

File Size: 36626 KB

Manufacturer: ADPOW [Advanced Power Technology]

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APT50GN60BDQ2G Suppliers

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  • APT1001RBN

  • Vendor: APT D/C: 05+& Qty: 247  Adddate: 2024-05-08
  • Inquire Now
  • RUIFENG   China
    Contact: Ms.Miss Lin  
    Tel: 086-0755-23815723
    Fax: 086-0755-23815723
    (1)

About APT1001

PDF/DataSheet Download

Datasheet: APT1001

File Size: 36626 KB

Manufacturer: ADPOW [Advanced Power Technology]

Download : Click here to Download

Related PDF Download

Related Part Number

APT50GN60B General Description

Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. Low gate charge simplifies gate drive design and minimizes losses.

APT50GN60B Maximum Ratings

Symbol Parameter Value Unit
VCES Collector-Emitter Voltage 600 Volts
VGE Gate-Emitter Voltage ± 30 Volts
IC Continuous Collector Current @ TC = 25°C 107 Amps
IC Continuous Collector Current @ TC = 110°C 64 Amps
ICM Pulsed Collector Current 1 150 Amps
SSOA Switching Safe Operating Area @ TJ = 150°C 150A @ 1200V  
PD Total Power Dissipation 366 Watts
TL Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. 300 °C
Tj
Tstg
Operating and Storage Junction Temperature Range -55 to 175 °C

APT50GN60B Features

• 600V Field Stop
• Trench Gate: Low VCE(on)
• Easy Paralleling
• 6s Short Circuit Capability
• 175°C Rated

APT50GN60B Typical Application

Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS

APT50GN60BDQ2G Parameters

Technical/Catalog InformationAPT50GN60BDQ2G
VendorMicrosemi-PPG
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)107A
Vce(on) (Max) @ Vge, Ic1.85V @ 15V, 50A
Power - Max366W
Mounting TypeThrough Hole
Package / CaseTO-247
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names APT50GN60BDQ2G
APT50GN60BDQ2G
APT50GN60BDQ2GMI ND
APT50GN60BDQ2GMIND
APT50GN60BDQ2GMI

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