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Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure.
APT50M38JFLL Maximum Ratings
Symbol
Parameter
APT5010JFLL
UNIT
VDSS
Drain-Source Voltage
500
Volts
ID
Continuous Drain Current @ TC = 25°C
91
Amps
IDM
Pulsed Drain Current
364
VGS
Gate-Source Voltage Continuous
±30
Volts
VGSM
Gate-Source Voltage Transient
±40
PD
Total Power Dissipation @ TC = 25°C
775
Watts
Linear Derating Factor
6.2
W/°C
TJ,TSTG
Operating and Storage Junction Temperature Range
-55 to 150
°C
TL
Lead Temperature: 0.063" from Case for 10 Sec.
300
IAR
Avalanche Current (Repetitve and Non-Repetitive)
91
Amps
EAR
Repetitive Avalanche Energy
50
mJ
EAS
Single Pulse Avalanche Energy
3600
APT50M38JFLL Features
• Lower Input Capacitance • Increased Power Dissipation • Lower Miller Capacitance • Easier To Drive • Lower Gate Charge, Qg • Popular SOT-227 Package
APT50M38JLL Parameters
Technical/Catalog Information
APT50M38JLL
Vendor
Microsemi-PPG
Category
Discrete Semiconductor Products
Mounting Type
Chassis Mount
FET Polarity
N-Channel
Drain to Source Voltage (Vdss)
500V
Current - Continuous Drain (Id) @ 25° C
88A
Rds On (Max) @ Id, Vgs
38 mOhm @ 44A, 10V
Input Capacitance (Ciss) @ Vds
12000pF @ 25V
Power - Max
694W
Packaging
Tube
Gate Charge (Qg) @ Vgs
270nC @ 10V
Package / Case
SOT-227
FET Feature
Standard
Drawing Number
*
Lead Free Status
Lead Free
RoHS Status
RoHS Compliant
Other Names
APT50M38JLL APT50M38JLL
APT50M38JLL General Description
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure.
APT50M38JLL Maximum Ratings
Symbol
Parameter
APT50M38JLL
UNIT
VDSS
Drain-Source Voltage
500
Volts
ID
Continuous Drain Current @ TC = 25
91
Amps
IDM
Pulsed Drain Current
364
VGS
Gate-Source Voltage Continuous
±30
Volts
VGSM
Gate-Source Voltage Transient
±40
PD
Total Power Dissipation @ TC = 25
775
Watts
Linear Derating Factor
6.2
W/
TJ,TSTG
Operating and StorageTemperature Range
-55 to 150
TL
Lead Temperature: 0.063" from Case for 10 Sec.
300
IAR
Avalanche Current(Repetitive and Non-Repetitive)
91
Amps
EAR
Repetitive Avalanche Energy
50
mJ
EAS
Single Pulse Avalanche Energy
3600
APT50M38JLL Features
• Lower Input Capacitance • Increased Power Dissipation • Lower Miller Capacitance • Easier To Drive • Lower Gate Charge, Qg • Popular SOT-227 Package
APT50M50JFLL Parameters
Technical/Catalog Information
APT50M50JFLL
Vendor
Microsemi-PPG
Category
Discrete Semiconductor Products
Mounting Type
Chassis Mount
FET Polarity
N-Channel
Drain to Source Voltage (Vdss)
500V
Current - Continuous Drain (Id) @ 25° C
71A
Rds On (Max) @ Id, Vgs
50 mOhm @ 35.5A, 10V
Input Capacitance (Ciss) @ Vds
10550pF @ 25V
Power - Max
595W
Packaging
Tube
Gate Charge (Qg) @ Vgs
200nC @ 10V
Package / Case
SOT-227
FET Feature
Standard
Drawing Number
*
Lead Free Status
Lead Free
RoHS Status
RoHS Compliant
Other Names
APT50M50JFLL APT50M50JFLL
APT50M50JFLL General Description
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure.
APT50M50JFLL Maximum Ratings
All Ratings: TC = 25°C unless otherwise specified
Symbol
Parameter
APT5010JFLL
UNIT
VDSS
Drain-Source Voltage
500
Volts
ID
Continuous Drain Current @ TC = 25°C
71
Amps
IDM
Pulsed Drain Current
284
VGS
Gate-Source Voltage Continuous
±30
Volts
VGSM
Gate-Source Voltage Transient
±40
PD
Total Power Dissipation @ TC = 25°C
595
Watts
Linear Derating Factor
4.76
W/°C
TJ,TSTG
Operating and Storage Junction Temperature Range
-55 to 150
°C
TL
Lead Temperature: 0.063" from Case for 10 Sec.
300
IAR
Avalanche Current (Repetitve and Non-Repetitive)
71
Amps
EAR
Repetitive Avalanche Energy
50
mJ
EAS
Single Pulse Avalanche Energy
3200
APT50M50JFLL Features
· Lower Input Capacitance ·Increased Power Dissipation · Lower Miller Capacitance · Easier To Drive · Lower Gate Charge, Qg · Popular SOT-227 Package
