APT8024LFLL, APT8024LLL, APT8024LVFR Selling Leads, Datasheet
MFG:APT Package Cooled:APT D/C:06+
APT8024LFLL, APT8024LLL, APT8024LVFR Datasheet download
Part Number: APT8024LFLL
MFG: APT
Package Cooled: APT
D/C: 06+
APT8024LFLL, APT8024LLL, APT8024LVFR
- Table of contents:
Info of APT8024LFLL
Info of APT8024LLL
Info of APT8024LVFR
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About APT8024LFLL
PDF/DataSheet Download
Datasheet: APT8024LFLL
File Size: 72815 KB
Manufacturer: ADPOW [Advanced Power Technology]
Download : Click here to Download
About APT8024LLL
PDF/DataSheet Download
Datasheet: APT8024LLL
File Size: 71895 KB
Manufacturer: ADPOW [Advanced Power Technology]
Download : Click here to Download
About APT8024LVFR
PDF/DataSheet Download
Datasheet: APT8024LVFR
File Size: 41505 KB
Manufacturer: ADPOW [Advanced Power Technology]
Download : Click here to Download
APT8024LFLL General Description
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure.
APT8024LFLL Maximum Ratings
| Symbol | Parameter | APT8024 | UNIT |
| VDSS | Drain-Source Voltage | 800 | Volts |
| ID | Continuous Drain Current @ TC = 25°C | 31 | Amps |
| IDM | Pulsed Drain Current | 124 | |
| VGS | Gate-Source Voltage Continuous | ±30 | Volts |
| VGSM | Gate-Source Voltage Transient | ±40 | |
| PD | Total Power Dissipation @ TC = 25°C | 565 | Watts |
| Linear Derating Factor | 4.52 | W/°C | |
| TJ,TSTG | Operating and Storage Junction Temperature Range | -55 to 150 | °C |
| TL | Lead Temperature: 0.063" from Case for 10 Sec | 300 | |
| IAR | Avalanche Current (Repetitive and Non-Repetitive) | 31 | Amps |
| EAR | Repetitive Avalanche Energy | 50 | mJ |
| EAS | Single Pulse Avalanche Energy | 2500 |
APT8024LLL General Description
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure.
APT8024LLL Maximum Ratings
| Symbol | Parameter | APT8024 | UNIT |
| VDSS | Drain-Source Voltage | 800 | Volts |
| ID | Continuous Drain Current @ TC = 25°C | 31 | Amps |
| IDM | Pulsed Drain Current | 124 | |
| VGS | Gate-Source Voltage Continuous | ±30 | Volts |
| VGSM | Gate-Source Voltage Transient | ±40 | |
| PD | Total Power Dissipation @ TC = 25°C | 565 | Watts |
| Linear Derating Factor | 4.52 | W/°C | |
| TJ,TSTG | Operating and Storage Junction Temperature Range | -55 to 150 | °C |
| TL | Lead Temperature: 0.063" from Case for 10 Sec | 300 | |
| IAR | Avalanche Current (Repetitive and Non-Repetitive) | 31 | Amps |
| EAR | Repetitive Avalanche Energy | 50 | mJ |
| EAS | Single Pulse Avalanche Energy | 2500 |
APT8024LVFR Maximum Ratings
| Symbol | Parameter | APT8024 | UNIT |
| VDSS | Drain-Source Voltage | 800 | Volts |
| ID | Continuous Drain Current @ TC = 25°C | 33 | Amps |
| IDM | Pulsed Drain Current |
132 | |
| VGS | Gate-Source Voltage Continuous | ±30 | Volts |
| VGSM | Gate-Source Voltage Transient | ±40 | |
| PD | Total Power Dissipation @ TC = 25°C | 625 | Watts |
| Linear Derating Factor | 5.0 | W/°C | |
| TJTSTG | Operating and Storage Junction Temperature Range | -55to150 | °C |
| TL | Lead Temperature: 0.063" from Case for 10 Sec | 300 | |
| IAR | Avalanche Current (Repetitive and Non-Repetitive) | 33 | Amps |
| EAR | Repetitive Avalanche Energy |
50 | mJ |
| EAS | Single Pulse Avalanche Energy | 3000 |
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