APT8058HVR, APT8065, APT8065AVR Selling Leads, Datasheet
MFG:APT Package Cooled:APT D/C:06+
APT8058HVR, APT8065, APT8065AVR Datasheet download
Part Number: APT8058HVR
MFG: APT
Package Cooled: APT
D/C: 06+
APT8058HVR, APT8065, APT8065AVR
- Table of contents:
Info of APT8058HVR
Info of APT8065
Info of APT8065AVR
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About APT8058HVR
PDF/DataSheet Download
Datasheet: APT8058HVR
File Size: 61933 KB
Manufacturer: ADPOW [Advanced Power Technology]
Download : Click here to Download
About APT8065
PDF/DataSheet Download
Datasheet: APT8065
File Size: 62275 KB
Manufacturer: ADPOW [Advanced Power Technology]
Download : Click here to Download
About APT8065AVR
PDF/DataSheet Download
Datasheet: APT8065AVR
File Size: 62275 KB
Manufacturer: ADPOW [Advanced Power Technology]
Download : Click here to Download
APT8058HVR General Description
Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.
APT8058HVR Maximum Ratings
| Symbol | Parameter |
APT8058HVR |
UNIT |
| VDSS | Drain-Source Voltage |
800 |
Volts |
| ID | Continuous Drain Current @ TC = 25 |
13.5 |
Amps |
| IDM | Pulsed Drain Current |
54 | |
| VGS | Gate-Source Voltage |
±30 |
Volts |
| VGSM | Gate-Source Voltage Transient |
±40 | |
| PD | Total Power Dissipation @ TC = 25 |
250 |
Watts |
| Linear Derating Factor |
2.0 |
W/ | |
| TJ,TSTG | Operating and StorageTemperature Range |
-55 to 150 |
|
| TL | Lead Temperature: 0.063" from Case for 10 Sec. |
300 | |
| IAR | Avalanche Current(Repetitive and Non-epetitive) |
13.5 |
Amps |
| EAR | Repetitive Avalanche Energy |
30 |
mJ |
| EAS | Single Pulse Avalanche Energy |
1300 |
APT8058HVR Features
• Faster Switching
• 100% Avalanche Tested
• Lower Leakage
• Popular TO-258 Package
• 100% Avalanche Tested
• Lower Leakage
• Popular TO-258 Package
APT8065AVR Maximum Ratings
| Symbol |
Parameter |
APT50M80JLC | UNIT |
VDSS |
Drain-Source Voltage |
800 | Volts |
| ID | Continuous Drain Current @ TC = 25°C |
11.5 | Amps |
| IDM | Pulsed Drain Current |
46 | |
| VGS | Gate-Source Voltage Continuous |
±30 | Volts |
| VGSM | Gate-Source Voltage Transient |
±40 | |
| PD | Total Power Dissipation @ TC = 25°C |
200 | Watts |
Linear Derating Factor |
1.6 | W/°C | |
| TJ,TSTG | Operating and Storage Junction Temperature Range |
-55 to 150 | °C |
| TL | Lead Temperature: 0.063" from Case for 10 Sec. |
300 | |
| IAR | Avalanche Current (Repetitive and Non-Repetitive) |
11.5 | Amps |
| EAR | Repetitive Avalanche Energy |
30 | mJ |
| EAS | Single Pulse Avalanche Energy |
1210 |
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