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AT-32033-TR1G, AT-32063, AT32063TR1

Table of contents:
Info of AT-32033-TR1G
Info of AT-32063
Info of AT32063TR1

AT-32033-TR1G, AT-32063, AT32063TR1 Selling Leads, Datasheet

MFG:Avago Technologies US Inc. Category:Discrete Semiconductor Products Package Cooled:Original Package D/C:08+/09+

AT-32033-TR1G, AT-32063, AT32063TR1 Datasheet download

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Part Number: AT-32033-TR1G

Category: Discrete Semiconductor Products

MFG: Avago Technologies US Inc.

Package Cooled: Original Package

D/C: 08+/09+

Description: IC TRANS NPN BIPOLAR SOT-23

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AT-32033-TR1G Parameters

Technical/Catalog Information	AT-32033-TR1G
Vendor	Avago Technologies US Inc.
Category	Discrete Semiconductor Products
Frequency - Transition	-
Noise Figure (dB Typ @ f)	1dB ~ 1.3dB @ 900MHz
Current - Collector (Ic) (Max)	32mA
DC Current Gain (hFE) (Min) @ Ic, Vce	70 @ 2mA, 2.7V
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	5.5V
Gain	11dB ~ 12.5dB
Power - Max	200mW
Compression Point (P1dB)	-
Package / Case	SOT-23
Packaging	Tape & Reel (TR)
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	AT 32033 TR1G AT32033TR1G 516 1566 2 ND 51615662ND 516-1566-2

AT-32063 General Description

The AT-32063 contains two high performance NPN bipolar transistors in a single SOT-363 package. The devices are unconnected, allowing flexibility in design. The pin-out is convenient for cascode amplifier designs. The SOT-363
package is an industry standard plastic surface mount package.

The 3.2 micron emitter-to-emitter pitch and reduced parasitic design of the transistor yields extremely high performance products that can perform a multiplicity of tasks. The 20 emitter finger interdigitated geometry yields a
transistor that is easy to match to and extremely fast, with moderate power, low noise resistance, and low operating currents.

Optimized performance at 2.7 V makes this device ideal for use in 900 MHz, 1.8 GHz, and 2.4 GHz battery operated systems as an Surface Mount Package SOT-363 (SC-70) Pin Connections and

LNA, gain stage, buffer, oscillator, or active mixer. Typical amplifier designs at 900 MHz yield 1.3 dB noise figures with 12 dB or more associated gain at a 2.7 V, 5 mA bias, with noise performance being relatively insensitive to
input match. High gain capability at 1 V, 1 mA makes this device a good fit for 900 MHz pager applications. Voltage breakdowns are high enough for use at 5 volts.

The AT-3 series bipolar transistors are fabricated using an optimized version of Hewlett-Packard's 10 GHz f t , 30 GHz fmax Self-Aligned-Transistor (SAT) process. The die are nitride passivated for surface protection. Excellent
device uniformity, performance and reliability are produced by the use of ion-implantation,selfalignment techniques, and gold metallization in the fabrication of these devices.

AT-32063 Maximum Ratings

Symbol	Parameter	Units	Absolute Maximum
V_EBO	Emitter-Base Voltage	V	1.5
V_CBO	Collector-Base Voltage	V	11
V_CEO	Collector-Emitter Voltage	V	5.5
I_C	Collector Current	mA	40
P_T	Power Dissipation ^[2,3]	mW	150
T_j	Junction Temperature	°C	150
T_STG	Storage Temperature	°C	-65 to 150

AT-32063 Features

• High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation
• 900 MHz Performance:1.1 dB NF, 14.5 dB G _A• Characterized for End-of-Life Battery Use (2.7 V)
• SOT-363 (SC-70) Plastic Package
• Tape-and-Reel Packaging Option Available ^[1]

AT-32063 Connection Diagram

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