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Part Number: AT-00500

Category: Other

MFG: Other

 

 

Description: The AT-00500 is a kind of high performance NPN silicon bipolar transistor chip designed for use in wide band amplifier an...


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AT-00500 General Description


The AT-00500 is a kind of high performance NPN silicon bipolar transistor chip designed for use in wide band amplifier and oscillator applications operating over VHF,UHF and microwave frequencies.There are some features of AT-00500 as follows.First is 16.0 dBm typical P1 dB at 2.0 GHz,The second is 11.5 dB typical G1 dB at 2.0 GHz.Then is 2.5 dB typical NFO at 2.0 GHz.The last one is high gain bandwidth product:9.0 GHz typical fT.

What comes next is about the absolute maximum ratings of AT-00500.The VEBO (emitter-base voltage) is 1.5 V.The VCBO (collector-base voltage) is 20 V.The VCEO (collector-emitter voltage) is 12 V.The IC (collector current) is 50 mA.The PT (power dissipation) is 500 mW.The Tj (junction temperature) is 200.The TSTG (storage temperature) is from -65 to 200.

The following is about the electrical specifications of AT-00500 (TA=25).The typical P1 dB (power output @ 1 dB gain compression) is 16.0 dB at VCE=8 V,IC=20 mA,f=2.0 GHz.The typical G1 dB (1 dB compression) is 11.5 dB at VCE=8 V,IC=20 mA,f=2.0 GHz.The typical NFO (optimum noise figure) is 2.5 dB at VCE=8 V,IC=5 mA,f=2.0 GHz.The typical GA (gain @ NFO) is 10.5 dB at VCE=8 V,IC=5 mA,f=2.0 GHz.The typical fT (gain bandwidth product) is 9.0 GHz at VCE=8 V,IC=20 mA.The minimum hFE (forward current transfer ratio) is 30,the typical is 150 and the maximum is 300 at VCE=8 V,IC=20 mA.The maximum ICBO (collector cutoff current) is 0.2 A at VCB=2 V.The maximum IEBO (emitter cutoff current) is 1.0 A at VEB=1 V.The typical CCB (collector base capacitance) is 0.45 pF at VCB=8 V,f=1 MHz.



AT-00500 Maximum Ratings



AT-00500 Features



AT-00500 datasheet

AT-100
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