MFG:ON Semiconductor Category:Discrete Semiconductor Products Package Cooled:VAL D/C:03+
BDV64A, BDV64AF, BDV64B Datasheet download
Category: Discrete Semiconductor Products
MFG: ON Semiconductor
Package Cooled: VAL
D/C: 03+
Description: TRANS DARL PNP 100V 10A TO-218
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PDF/DataSheet Download
Datasheet: BDV64A
File Size: 659453 KB
Manufacturer: POINN [Power Innovations Limited]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: BDV64
File Size: 659453 KB
Manufacturer: TRSYS [TRSYS]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: BDV64B
File Size: 659453 KB
Manufacturer: MOTOROLA [Motorola, Inc]
Download : Click here to Download
| SYMBOL | PARAMETER | CONDITIONS | VALUE | UNIT | |
| VCBO | Collector-base voltage | BDV64 BDV64A BDV64B BDV64C |
Open emitter | -60 -80 -100 -120 |
V |
| VCEO | Collector-emitter voltage | BDV64 BDV64A BDV64B BDV64C |
Open base | -60 -80 -100 -120 |
V |
| VEBO | Emitter-base voltage | Open collector | -5 | V | |
| IC | Collector current | -12 | A | ||
| ICM | Collector current-peak | -15 | A | ||
| IB | Base current | -0.5 | A | ||
| PC | Collector power dissipation | TC=25 Ta=25 |
125 3.5 |
W | |
| Tj | Junction temperature | 150 | |||
| Tstg | Storage temperature | -65~150 | |||
| Technical/Catalog Information | BDV64B |
| Vendor | ON Semiconductor |
| Category | Discrete Semiconductor Products |
| Transistor Type | PNP - Darlington |
| Voltage - Collector Emitter Breakdown (Max) | 100V |
| Current - Collector (Ic) (Max) | 10A |
| Power - Max | 125W |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 5A, 4V |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 20mA, 5A |
| Frequency - Transition | - |
| Current - Collector Cutoff (Max) | 1mA |
| Mounting Type | Through Hole |
| Package / Case | SOT-93, TO-218 (Straight Leads) |
| Packaging | Tube |
| Drawing Number | * |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | BDV64B BDV64B |
| SYMBOL | PARAMETER | CONDITIONS | VALUE | UNIT | |
| VCBO | Collector-base voltage | BDV64 BDV64A BDV64B BDV64C |
Open emitter | -60 -80 -100 -120 |
V |
| VCEO | Collector-emitter voltage | BDV64 BDV64A BDV64B BDV64C |
Open base | -60 -80 -100 -120 |
V |
| VEBO | Emitter-base voltage | Open collector | -5 | V | |
| IC | Collector current | -12 | A | ||
| ICM | Collector current-peak | -15 | A | ||
| IB | Base current | -0.5 | A | ||
| PC | Collector power dissipation | TC=25 Ta=25 |
125 3.5 |
W | |
| Tj | Junction temperature | 150 | |||
| Tstg | Storage temperature | -65~150 | |||
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