Application* High DC Current Gain HFE = 1000 (min.) @ 5 Adc* Monolithic Construction with Builtin Base Emitter Shunt ResistorsSpecifications Rating Symbol Value Unit CollectorEmitter Voltage VCEO 100 Vdc CollectorBase Voltage VCBO 100 Vdc Emitter-Base Voltage VE...
BDV6B: Application* High DC Current Gain HFE = 1000 (min.) @ 5 Adc* Monolithic Construction with Builtin Base Emitter Shunt ResistorsSpecifications Rating Symbol Value Unit CollectorEmitter ...
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| Rating | Symbol |
Value |
Unit |
| CollectorEmitter Voltage | VCEO |
100 |
Vdc |
| CollectorBase Voltage | VCBO |
100 |
Vdc |
| Emitter-Base Voltage | VEB |
5.0 |
Vdc |
| Collector Current - Continuous - Peak |
IC |
10 20 |
Adc |
| Base Current | IB |
0.5 |
Vdc |
| Total Device Dissipation @ TC = 25 Derate above 25 |
PD |
125 1.0 |
Watt mW/ |
| Operating and Storage Junction Temperarture Range |
TJ:TSTG |
55 to +150 |