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BFG11X, BFG134, BFG135

Table of contents:
Info of BFG11X
Info of BFG134
Info of BFG135

BFG11X, BFG134, BFG135 Selling Leads, Datasheet

MFG:SIE Package Cooled:SOT-223 D/C:09+

BFG11X, BFG134, BFG135 Datasheet download

Five Points

Part Number: BFG11X

MFG: SIE

Package Cooled: SOT-223

D/C: 09+

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BFG11X General Description

NPN silicon planar epitaxial transistor encapsulated in a plastic 4-pin dual-emitter SOT343 package.

BFG11X Maximum Ratings

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
V_CBO	collector-base voltage	open emitter	-	20	V
V_CEO	collector-emitter voltage	open base	-	8	V
V_EBO	emitter-base voltage	open collector	-	2.5	V
I_C	collector current (DC)		-	500	mA
P_tot	total power dissipation	up to T_s = 60 °C; note 1	-	760	mW
T_stg	storage temperature		-65	+150	°C
T_j	junction temperature		-	175	°C

Note to the Limiting values and Thermal characteristics
1. T_s is the temperature at the soldering point of the collector tab.

BFG11X Features

· High power gain
· High efficiency
· Small size discrete power amplifier
· 1.9 GHz operating area
· Gold metallization ensures excellent reliability
· Linear and non-linear operation.

BFG11X Typical Application

· Common emitter class-AB operation in handheld radio equipment at 1.9 GHz such as DECT, PHS.
· Driver for DCS 1800.

BFG11X Connection Diagram

BFG135 General Description

NPN silicon planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband amplifier applications. The small emitter structures, with integrated emitter-ballasting resistors, ensure high output voltage capabilities at a low distortion level.

The distribution of the active areas across the surface of the device gives an excellent temperature profile.

BFG135 Maximum Ratings

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
V_CBO	collector-base voltage	open emitter	-	25	V
V_CEO	collector-emitter voltage	open base	-	15	V
V_EBO	emitter-base voltage	open collector	-	2	V
I_C	collector current (DC)		-	150	mA
P_tot	total power dissipation	up to T_s = 145 °C (note 1)	-	1	mW
T_stg	storage temperature		-65	150	°C
T_j	junction temperature		-	175	°C

Note
1. T_s is the temperature at the soldering point of the collector tab.

BFG135 Connection Diagram

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