Features: · For low-distortion broadband output amplifier stages in antenna and telecommunication systems up to 2 GHz at collector currents from 120 mA to 250 mA· Power amplifiers for DECT and PCN systems· Integrated emitter ballast resistor· fT = 5.5 GHzSpecifications Parameter Symbol ...
BFG 235: Features: · For low-distortion broadband output amplifier stages in antenna and telecommunication systems up to 2 GHz at collector currents from 120 mA to 250 mA· Power amplifiers for DECT and PCN s...
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· For low-distortion broadband output amplifier stages in antenna and telecommunication systems up to 2 GHz at collector currents from 120 mA to 250 mA
· Power amplifiers for DECT and PCN systems
· Integrated emitter ballast resistor
· fT = 5.5 GHz
| Parameter |
Symbol |
Value |
Unit |
| Collector-emitter voltage |
VCEO |
15 |
V |
| Collector-emitter voltage |
VCES |
25 | |
| Collector-base voltage |
VCBO |
25 | |
| Emitter-base voltage |
VEBO |
2 | |
| Collector current |
IC |
300 |
mA |
| Base current |
IB |
40 | |
| Total power dissipation, TS 80°C F |
Ptot |
2 |
W |
| Junction temperature |
Tj |
150 |
°C |
| Ambient temperature |
TA |
-65 ... 150 | |
| Storage temperature |
Tstg |
-65 ... 150 | |
| Thermal Resistance | |||
| Junction - soldering point |
RthJS |
35 |
K/W |