BFG480W, BFG505, BFG505/N33 Selling Leads, Datasheet
MFG:PHILIPS Package Cooled:05+ D/C:30000
BFG480W, BFG505, BFG505/N33 Datasheet download

Part Number: BFG480W
MFG: PHILIPS
Package Cooled: 05+
D/C: 30000
MFG:PHILIPS Package Cooled:05+ D/C:30000
BFG480W, BFG505, BFG505/N33 Datasheet download

MFG: PHILIPS
Package Cooled: 05+
D/C: 30000
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PDF/DataSheet Download
Datasheet: BFG480W
File Size: 164079 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: BFG505
File Size: 163042 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: BFG10
File Size: 76569 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
NPN double polysilicon wideband transistor with buried layer for low voltage applications in a 4-pin dual-emitter SOT343R plastic package.
| SYMBOL | PARAMETER | CONDITIONS |
TYP. |
MAX. |
UNIT |
| VCBO | collector-base voltage | open base |
- |
4.5 |
V |
| IC | DC collector current |
80 |
250 |
mA | |
| Ptot | total power dissipation | Ts 60 °C |
- |
360 |
mW |
| fT | transition frequency | IC = 80 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 °C |
21 |
- |
GHz |
| Gmax | maximum gain | IC = 80 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 °C |
16 |
- |
dB |
| F | noise figure | IC = 8 mA; VCE = 2 V; f = 2 MHz; GS = Gopt |
1.8 |
- |
dB |
| GP | power gain | Pulsed; class-AB; < 1 : 2; tp = 5 ms; VCE = 3.6 V; f = 2 GHz; PL = 100 mW |
13.5 |
- |
dB |
| C | collector efficiency | Pulsed; class-AB; d < 1 : 2; tp = 5 ms; VCE = 3.6 V; f = 2 GHz; PL = 100 mW |
45 |
- |
% |

