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BFG540/X, BFG540/X T/R, BFG540/X/N43

Table of contents:
Info of BFG540/X
Info of BFG540/X T/R
Info of BFG540/X/N43

BFG540/X, BFG540/X T/R, BFG540/X/N43 Selling Leads, Datasheet

MFG:PHILIPS Package Cooled:SOT143 D/C:2008

BFG540/X, BFG540/X T/R, BFG540/X/N43 Picture

BFG540/X, BFG540/X T/R, BFG540/X/N43 Datasheet download

Five Points

Part Number: BFG540/X

MFG: PHILIPS

Package Cooled: SOT143

D/C: 2008

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BFG540/X General Description

NPN silicon planar epitaxial transistors, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre-optical systems.

The transistors are mounted in plastic SOT143B and SOT143R packages.

BFG540/X Maximum Ratings

SYMBOL	PARAMETER	CONDITIONS	MIN.	TYP.	MAX.	UNIT
V_CBO	collector-base voltage	open emitter	-	-	20	V
V_CES	collector-emitter voltage	R_BE = 0	-	-	15	V
I_C	DC collector current		-	-	120	mA
P_tot	total power dissipation	T_s 60 °C; note 1	-	-	400	mW
h_FE	DC current gain	I_C = 40 mA; V_CE = 8 V; T_j= 25 °C	100	120	250
C_re	feedback capacitance	I_C = 0; V_CE = 8 V; f = 1 MHz	-	0.5	-	pF
f_T	transition frequency	I_C = 40 mA; V_CE = 8 V; f = 1 GHz; T_amb = 25 °C	-	9	-	GHz
G_UM	maximum unilateral power gain	I_C = 40 mA; V_CE = 8 V; f = 900 MHz; T_amb = 25 °C	-	18	-	dB
G_UM	maximum unilateral power gain	I_C = 40 mA; V_CE = 8 V; f = 2 GHz; T_amb = 25 °C	-	11	-	dB
\|s21\|²	insertion power gain	I_C = 40 mA; V_CE = 8 V; f = 900 MHz; T_amb= 25 °C	15	16	-	dB
F	noise figure	G_s = Gopt; I_C = 10 mA; V_CE = 8 V; f = 900 MHz; T_amb = 25 °C	-	1.3	1.8	dB
		G_s = Gopt; I_C = 40 mA; V_CE = 8 V; f = 900 MHz; T_amb = 25 °C	-	1.9	2.4	dB
		G_s = Gopt; I_C = 10 mA; V_CE = 8 V; f = 2 GHz; T_amb = 25 °C	-	2.1	-	dB

BFG540/X Features

· High power gain
· Low noise figure
· High transition frequency
· Gold metallization ensures excellent reliability.

BFG540/X Connection Diagram

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