BFM2431J, BFM505, BFM520 Selling Leads, Datasheet
MFG:PHILIPS Package Cooled:10 D/C:SSOP-28
BFM2431J, BFM505, BFM520 Datasheet download
Part Number: BFM2431J
MFG: PHILIPS
Package Cooled: 10
D/C: SSOP-28
BFM2431J, BFM505, BFM520
- Table of contents:
Info of BFM2431J
Info of BFM505
Info of BFM520
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About BFM505
PDF/DataSheet Download
Datasheet: BFM505
File Size: 95125 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About BFM505
PDF/DataSheet Download
Datasheet: BFM505
File Size: 95125 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About BFM520
PDF/DataSheet Download
Datasheet: BFM520
File Size: 98901 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
BFM505 General Description
Dual transistor with two silicon NPN RF dies in a surface mount, 6-pin SOT363 (S-mini) package. The transistors are primarily intended for wideband applications in the GHz-range in the RF front end of analog and digital cellular phones, cordless phones, radar detectors, pagers and satellite TV-tuners.
BFM505 Maximum Ratings
| SYMBOL | PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
| VCBO | collector-base voltage |
open emitter |
- |
20 |
V |
| VCEO | collector-emitter voltage |
open base |
- |
8 |
V |
| VEBO | emitter-base voltage |
open collector |
- |
2.5 |
V |
| IC | collector current |
- |
18 |
mA | |
| Ptot | total power dissipation |
up to Ts = 118 °C note 1 |
- |
500 |
mW |
| Tstg | storage temperature |
-65 |
+175 |
°C | |
| Tj | junction temperature |
- |
175 |
°C |
BFM505 Features
· Small size
· Temperature and hFE matched
· Low noise and high gain
· High gain at low current and low capacitance at low voltage
· Gold metallization ensures excellent reliability.
· Temperature and hFE matched
· Low noise and high gain
· High gain at low current and low capacitance at low voltage
· Gold metallization ensures excellent reliability.
BFM505 Typical Application
· Oscillator and buffer amplifiers
· Balanced amplifiers
· LNA/mixer.
· Balanced amplifiers
· LNA/mixer.
BFM505 Connection Diagram
BFM520 General Description
Dual transistor with two silicon NPN RF dies in a surface mount 6-pin SOT363 (S-mini) package. The transistor is primarily intended for wideband applications in the GHz-range in the RF front end of analog and digital cellular phones, cordless phones, radar detectors, pagers and satellite TV-tuners.
BFM520 Maximum Ratings
| SYMBOL | PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
| VCBO | collector-base voltage |
open emitter |
- |
20 |
V |
| VCEO | collector-emitter voltage |
open base |
- |
8 |
V |
| VEBO | emitter-base voltage |
open collector |
- |
2.5 |
V |
| IC | collector current |
- |
70 |
mA | |
| Ptot | total power dissipation |
up to Ts = 118 °C note 1 |
- |
1 |
W |
| Tstg | storage temperature |
-65 |
+175 |
°C | |
| Tj | junction temperature |
- |
175 |
°C |
BFM520 Features
· Small size
· Temperature and hFE matched
· Low noise and high gain
· High gain at low current and low capacitance at low voltage
· Gold metallization ensures excellent reliability.
· Temperature and hFE matched
· Low noise and high gain
· High gain at low current and low capacitance at low voltage
· Gold metallization ensures excellent reliability.
BFM520 Typical Application
· Oscillator and buffer amplifiers
· Balanced amplifiers
· LNA/mixers.
· Balanced amplifiers
· LNA/mixers.
BFM520 Connection Diagram
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