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BFM505

Features: · Small size· Temperature and hFE matched· Low noise and high gain· High gain at low current and low capacitance at low voltage· Gold metallization ensures excellent reliability.Application· Oscillator and buffer amplifiers· Balanced amplifiers· LNA/mixer.PinoutSpecifications SYMB...

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SeekIC No. : 004299700 Detail

BFM505: Features: · Small size· Temperature and hFE matched· Low noise and high gain· High gain at low current and low capacitance at low voltage· Gold metallization ensures excellent reliability.Applicatio...

BFM505 Data Sheet

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Part Number:
BFM505
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Description



Features:

· Small size
· Temperature and hFE matched
· Low noise and high gain
· High gain at low current and low capacitance at low voltage
· Gold metallization ensures excellent reliability.


Application

· Oscillator and buffer amplifiers
· Balanced amplifiers
· LNA/mixer.


Pinout

Connection Diagram


Specifications

SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO collector-base voltage
open emitter
-
20
V
VCEO collector-emitter voltage
open base
-
8
V
VEBO emitter-base voltage
open collector
-
2.5
V
IC collector current
-
18
mA
Ptot total power dissipation
up to Ts = 118 °C note 1
-
500
mW
Tstg storage temperature
-65
+175
°C
Tj junction temperature
-
175
°C



Description

Dual transistor BFM505 with two silicon NPN RF dies in a surface mount, 6-pin SOT363 (S-mini) package. The transistors are primarily intended for wideband applications in the GHz-range in the RF front end of analog and digital cellular phones, cordless phones, radar detectors, pagers and satellite TV-tuners.




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