BGF844, BGF944, BGFD Selling Leads, Datasheet
MFG:PHILIPS Package Cooled:SOT365C D/C:80
BGF844, BGF944, BGFD Datasheet download
Part Number: BGF844
MFG: PHILIPS
Package Cooled: SOT365C
D/C: 80
BGF844, BGF944, BGFD
- Table of contents:
Info of BGF844
Info of BGF944
Info of BGFD
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About BGF844
PDF/DataSheet Download
Datasheet: BGF844
File Size: 93375 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About BGF944
PDF/DataSheet Download
Datasheet: BGF944
File Size: 93938 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About BGF1901-10
PDF/DataSheet Download
Datasheet: BGF1901-10
File Size: 101416 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
BGF844 General Description
23 W LDMOS power amplifier module for base station amplifier applications in the 869 to 894 MHz band.
BGF844 Maximum Ratings
| SYMBOL | PARAMETER | MIN. | MAX. | UNIT |
| VS | DC supply voltage | − | 30 | V |
| PD | input drive power | − | 100 | mW |
| PL | load power | − | 27 | W |
| Tstg | storage temperature | −30 | +100 | |
| Tmb | operating mounting base temperature | −20 | +90 |
BGF844 Features
• Typical GSM EDGE performance at a supply voltage of 26 V:
Output power = 2.5 W
Gain = 30 dB
Efficiency = 16%
ACPR < −65 dBc at 400 kHz
rms EVM < 0.4%
peak EVM < 1.2%
• Low distortion to a GSM EDGE signal
• Excellent 2-tone performance
• Low die temperature due to copper flange
• Integrated temperature compensated bias
• 50 Ω input/output impedance
• Flat gain over frequency band.
Output power = 2.5 W
Gain = 30 dB
Efficiency = 16%
ACPR < −65 dBc at 400 kHz
rms EVM < 0.4%
peak EVM < 1.2%
• Low distortion to a GSM EDGE signal
• Excellent 2-tone performance
• Low die temperature due to copper flange
• Integrated temperature compensated bias
• 50 Ω input/output impedance
• Flat gain over frequency band.
BGF844 Typical Application
• Base station RF power amplifiers in the 869 to 894 MHz frequency range
• GSM, GSM EDGE, multi carrier applications
• Macrocell (driver stage) and Microcell (final stage).
• GSM, GSM EDGE, multi carrier applications
• Macrocell (driver stage) and Microcell (final stage).
BGF944 General Description
17 W LDMOS power amplifier module for base station amplifier applications in the 920 to 960 MHz band.
BGF944 Maximum Ratings
| SYMBOL | PARAMETER | MIN. | MAX. | UNIT |
| VS | DC supply voltage | − | 30 | V |
| PD | input drive power | − | 100 | mW |
| PL | load power | − | 24 | W |
| Tstg | storage temperature | −30 | +100 | |
| Tmb | operating mounting base temperature | −20 | +90 |
BGF944 Features
• Typical GSM EDGE performance at a supply voltage of 26 V:
Output power = 2.5 W
Gain = 29 dB
Efficiency = 15%
ACPR < −65 dBc at 400 kHz
rms EVM < 0.4%
peak EVM < 1.2%
• Low distortion to a GSM EDGE signal
• Excellent 2-tone performance
• Low die temperature due to copper flange
• Integrated temperature compensated bias
• 50 Ω input/output impedance
• Flat gain over frequency band.
Output power = 2.5 W
Gain = 29 dB
Efficiency = 15%
ACPR < −65 dBc at 400 kHz
rms EVM < 0.4%
peak EVM < 1.2%
• Low distortion to a GSM EDGE signal
• Excellent 2-tone performance
• Low die temperature due to copper flange
• Integrated temperature compensated bias
• 50 Ω input/output impedance
• Flat gain over frequency band.
BGF944 Typical Application
• Base station RF power amplifiers in the 920 to 960 MHz frequency band
• GSM, GSM EDGE, multi carrier applications
• Macrocell (driver stage) and Microcell (final stage).
• GSM, GSM EDGE, multi carrier applications
• Macrocell (driver stage) and Microcell (final stage).
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