BGF844

Noise Figure :
Bandwidth :
Output Intercept Point :
Supply Current :
Mounting Style : SMD/SMT
Type : Base Station LDMOS RF Power Module
Maximum Operating Temperature : + 90 C
Operating Frequency : 894 MHz
Operating Supply Voltage : 26 VDC
Package / Case : SOT-365
Packaging : Rail


Features:

• Typical GSM EDGE performance at a supply voltage of 26 V:
Output power = 2.5 W
Gain = 30 dB
Efficiency = 16%
ACPR < −65 dBc at 400 kHz
rms EVM < 0.4%
peak EVM < 1.2%
• Low distortion to a GSM EDGE signal
• Excellent 2-tone performance
• Low die temperature due to copper flange
• Integrated temperature compensated bias
• 50 Ω input/output impedance
• Flat gain over frequency band.


Application

• Base station RF power amplifiers in the 869 to 894 MHz frequency range
• GSM, GSM EDGE, multi carrier applications
• Macrocell (driver stage) and Microcell (final stage).


Specifications

SYMBOL	PARAMETER	MIN.	MAX.	UNIT
VS	DC supply voltage	−	30	V
PD	input drive power	−	100	mW
PL	load power	−	27	W
Tstg	storage temperature	−30	+100
Tmb	operating mounting base temperature	−20	+90

Description

23 W LDMOS power amplifier BGF844 module for base station amplifier applications in the 869 to 894 MHz band.