BLT53, BLT53/B, BLT70 Selling Leads, Datasheet
MFG:Philips Package Cooled:SOT-122D D/C:08+
BLT53, BLT53/B, BLT70 Datasheet download
Part Number: BLT53
MFG: Philips
Package Cooled: SOT-122D
D/C: 08+
BLT53, BLT53/B, BLT70
- Table of contents:
Info of BLT53
Info of BLT53/B
Info of BLT70
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About BLT53
PDF/DataSheet Download
Datasheet: BLT53
File Size: 73892 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About BLT11
PDF/DataSheet Download
Datasheet: BLT11
File Size: 497373 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About BLT70
PDF/DataSheet Download
Datasheet: BLT70
File Size: 75663 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
BLT53 General Description
NPN silicon planar epitaxial transistor encapsulated in a 4-lead SOT122D studless envelope with a ceramic cap. It is designed for common emitter,class-B operation in portable radio transmitters in the 470 MHz communications band. All leads are isolated from the mounting flange.
BLT53 Maximum Ratings
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VCBO | collector-base voltage | open emitter | 20 | V | |
| VCES | collector-emitter voltage | open base | 10 | V | |
| VEBO | emitter-base voltage | open collector | 3 | V | |
| IC,IC(AV) | peak collector current | DC or average value | 2.5 | A | |
| ICM | peak collector current | peak value f > 1 MHz | 7.5 | A | |
| Ptot | total power dissipation | RF operation; Tmb = 25 °C |
35.5 | W | |
| Tstg | storage temperature | -65 | +150 | ||
| Tj | operating junction temperature | 200 |
BLT53 Features
* Emitter-ballasting resistors for an optimum temperature profile
* Gold metallization ensures excellent reliability
* Withstands full load mismatch.
* Gold metallization ensures excellent reliability
* Withstands full load mismatch.
BLT53 Connection Diagram
BLT70 General Description
NPN silicon planar epitaxial transistor encapsulated in a plastic SOT223H SMD package.
BLT70 Maximum Ratings
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VCBO | collector-base voltage | open emitter | 16 | V | |
| VCES | collector-emitter voltage | open base | 8 | V | |
| VEBO | emitter-base voltage | open collector | 2.5 | V | |
| IC | peak collector current | 250 | A | ||
| Ptot | total power dissipation | Ts =60 °C; note 1 | 2.1 | W | |
| Tstg | storage temperature | -65 | +150 | ||
| Tj | operating junction temperature | 175 |
BLT70 Features
* Very high efficiency
* Low supply voltage.
* Low supply voltage.
BLT70 Typical Application
* Hand-held radio equipment in common emitter class-AB operation in the 900 MHz communication band.
BLT70 Connection Diagram
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