BLW85, BLW86, BLW87 Selling Leads, Datasheet
MFG:PHIL Package Cooled:02+ D/C:08+/09+
BLW85, BLW86, BLW87 Datasheet download
Part Number: BLW85
MFG: PHIL
Package Cooled: 02+
D/C: 08+/09+
BLW85, BLW86, BLW87
- Table of contents:
Info of BLW85
Info of BLW86
Info of BLW87
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About BLW85
PDF/DataSheet Download
Datasheet: BLW85
File Size: 111616 KB
Manufacturer: PHILIPS [Philips Semiconductors]
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About BLW86
PDF/DataSheet Download
Datasheet: BLW86
File Size: 120177 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About BLW87
PDF/DataSheet Download
Datasheet: BLW87
File Size: 83135 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
BLW85 General Description
N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile h.f. and v.h.f. transmitters with a nominal supply voltage of 12,5 V. The transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions with a supply over-voltage to 16,5 V.
Matched hFE groups are available on request.
It has a 3/8" flange envelope with a ceramic cap. All leads are isolated from the flange.
Matched hFE groups are available on request.
It has a 3/8" flange envelope with a ceramic cap. All leads are isolated from the flange.
BLW85 Maximum Ratings
| Collector-base voltage (open emitter)peak value | VCESM | max. | 36v | ||
| Collector-emitter voltage (open base) | Vceo | max. | 16v | ||
| Emitter-base voltage (open collector) | Vebo | max. | 4v | ||
| Collector current (average) | IC(AV) | max. | 9 A | ||
| Collector current (peak value); f > 1 MHz | ICM | max. | 22 A | ||
| D.C. and r.f. (f > 1 MHz) power | |||||
| dissipation; Tmb = 25 °C | Ptot ,Prf | max. | 105 W | ||
| Storage temperature | Tstg | -65 to , 150 °C | |||
| Operating junction temperature | Tj | max. | 200 °C | ||
BLW85 Connection Diagram
BLW86 General Description
N-P-N silicon planar epitaxial transistor intended for use in class-A, AB and B operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions. Matched hFE groups are available on request.
It has a 3/8" flange envelope with a ceramic cap. All leads are isolated from the flange.
BLW86 Maximum Ratings
| Collector-base voltage (open emitter)peak value | VCESM | max. | 65v | ||
| Collector-emitter voltage (open base) | Vceo | max. | 36v | ||
| Emitter-base voltage (open collector) | Vebo | max. | 4v | ||
| Collector current (average) | IC(AV) | max. | 4 A | ||
| Collector current (peak value); f > 1 MHz | ICM | max. | 12 A | ||
| D.C. and r.f. (f > 1 MHz) power | |||||
| dissipation; Tmb = 25 °C | Ptot ,Prf | max. | 105 W | ||
| Storage temperature | Tstg | -65 to , 150 °C | |||
| Operating junction temperature | Tj | max. | 200 °C | ||
BLW86 Connection Diagram
BLW87 General Description
N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile h.f. and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions with a supply over-voltage to 16,5 V.
It has a 3/8" flange envelope with a ceramic cap. All leads are isolated from the flange.
It has a 3/8" flange envelope with a ceramic cap. All leads are isolated from the flange.
BLW87 Maximum Ratings
| Collector-base voltage (open emitter)(peak value); VBE =0 open base |
VCBSM | max. | 36v | ||
| Collector-emitter voltage (open base) | Vceo | max. | 18v | ||
| Emitter-base voltage (open collector) | Vebo | max. | 4v | ||
| Collector current | |||||
| d.c. or average | IC(AV) | max. | 6 A | ||
| (peak value); f > 1 MHz | ICM | max. | 12 A | ||
| Total power dissipation | |||||
|
at Tmb = 94 °C; f > 1 MHz |
P (r.f.) | max. | 76W | ||
| Storage temperature | Tstg | -65 to , 150 °C | |||
| Operating junction temperature | Tj | max. | 200 °C | ||
BLW87 Connection Diagram
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