MFG:Infineon Technologies (VA) Category:Discrete Semiconductor Products Package Cooled:SOT363 D/C:08+
BSD223P, BSD254A, BSGSS/U902 Datasheet download
Category: Discrete Semiconductor Products
MFG: Infineon Technologies (VA)
Package Cooled: SOT363
D/C: 08+
Description: MOSFET DUAL PCH 30V 390MA SOT363
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Datasheet: BSD223P
File Size: 76428 KB
Manufacturer: INFINEON [Infineon Technologies AG]
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Datasheet: BSD22
File Size: 40755 KB
Manufacturer: PHILIPS [Philips Semiconductors]
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| Technical/Catalog Information | BSD223P |
| Vendor | Infineon Technologies (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | 2 P-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 390mA |
| Rds On (Max) @ Id, Vgs | 1.2 Ohm @ 390mA, 4.5V |
| Input Capacitance (Ciss) @ Vds | 56pF @ 15V |
| Power - Max | 250mW |
| Packaging | Digi-Reel? |
| Gate Charge (Qg) @ Vgs | 0.62nC @ 4.5V |
| Package / Case | SC-70-6, SC-88, SOT-323-6, SOT-363 |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | BSD223P BSD223P BSD223PINDKR ND BSD223PINDKRND BSD223PINDKR |
| Parameter | Symbol | Value | Unit |
| Continuous drain current TA=25°C TA=70°C |
ID | -0.39 -0.31 |
A |
| Pulsed drain current TA=25°C |
ID puls | -1.56 | A |
| Avalanche energy, single pulse ID=-0.39 A , VDD=-10V, RGS=25 |
EAS | 1.4 | mJ |
| Reverse diode dv/dt IS=-0.39A, VDS=-16V, di/dt=200A/s, Tjmax=150°C |
dv/dt | -6 | kV/s |
| Gate source voltage | VGS | ±12 | V |
| Power dissipation TA=25°C |
Ptot | 0.25 | W |
| Operating and storage temperature | Tj , Tstg | -55... +150 | °C |
| IEC climatic category; DIN IEC 68-1 | 55/150/5 |
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