FET Feature: Logic Level Gate
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Power - Max: 250mW
FET Type: 2 P-Channel (Dual)
Drain to Source Voltage (Vdss): 20V
Gate Charge (Qg) @ Vgs: 0.62nC @ 4.5V
Packaging: Cut Tape (CT)
Series: OptiMOS™
Manufacturer: Infineon Technologies
Supplier Device Package: PG-SOT363-6
Current - Continuous Drain (Id) @ 25° C: 390mA
Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 390mA, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 1.5µA
Input Capacitance (Ciss) @ Vds: 56pF @ 15V
Features: • Dual P-Channel
• Enhancement mode
• Super Logic Level (2.5 V rated)
• 150°C operating temperature
• Avalanche rated
• dv/dt ratedSpecifications
| Parameter |
Symbol |
Value |
Unit |
Continuous drain current
TA=25°C
TA=70°C |
ID |
-0.39
-0.31 |
A |
Pulsed drain current
TA=25°C |
ID puls |
-1.56 |
A |
Avalanche energy, single pulse
ID=-0.39 A , VDD=-10V, RGS=25 |
EAS |
1.4 |
mJ |
Reverse diode dv/dt
IS=-0.39A, VDS=-16V, di/dt=200A/s, Tjmax=150°C |
dv/dt |
-6 |
kV/s |
| Gate source voltage |
VGS |
±12 |
V |
Power dissipation
TA=25°C |
Ptot |
0.25 |
W |
| Operating and storage temperature |
Tj , Tstg |
-55... +150 |
°C |
| IEC climatic category; DIN IEC 68-1 |
|
55/150/5 |
|
Parameters: | Technical/Catalog Information | BSD223P |
| Vendor | Infineon Technologies (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | 2 P-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 390mA |
| Rds On (Max) @ Id, Vgs | 1.2 Ohm @ 390mA, 4.5V |
| Input Capacitance (Ciss) @ Vds | 56pF @ 15V |
| Power - Max | 250mW |
| Packaging | Digi-Reel? |
| Gate Charge (Qg) @ Vgs | 0.62nC @ 4.5V |
| Package / Case | SC-70-6, SC-88, SOT-323-6, SOT-363 |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | BSD223P
BSD223P
BSD223PINDKR ND
BSD223PINDKRND
BSD223PINDKR
|
BSD223P Data Sheet
