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BSS10, BSS100, BSS101

BSS10, BSS100, BSS101 Selling Leads, Datasheet

MFG:Fairchild Semiconductor  Category:Discrete Semiconductor Products  Package Cooled:CAN3  D/C:05+

BSS100 Picture

BSS10, BSS100, BSS101 Datasheet download

Five Points

Part Number: BSS100

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: CAN3

D/C: 05+

Description: MOSFET N-CH 100V 5 OHM TO92

 

 
 
 
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BSS10 Suppliers

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  • BSS100

  • Vendor: Infineon D/C: 08+& Qty: 12345  Adddate: 2024-03-28
  • Inquire Now
  • Zion Components   United
    Contact: Mr.George Ferreira  
    Tel: 954-234-7783
    Fax: 954-622-9773
    (63)

About BSS100

PDF/DataSheet Download

Datasheet: BSS100

File Size: 291374 KB

Manufacturer: SIEMENS [Siemens Semiconductor Group]

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BSS100 Suppliers

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  • BSS100

  • Vendor: Infineon D/C: 08+& Qty: 12345  Adddate: 2024-03-28
  • Inquire Now
  • Zion Components   United
    Contact: Mr.George Ferreira  
    Tel: 954-234-7783
    Fax: 954-622-9773
    (63)

About BSS100

PDF/DataSheet Download

Datasheet: BSS100

File Size: 291374 KB

Manufacturer: SIEMENS [Siemens Semiconductor Group]

Download : Click here to Download

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BSS101 Suppliers

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  • BSS100

  • Vendor: Infineon D/C: 08+& Qty: 12345  Adddate: 2024-03-28
  • Inquire Now
  • Zion Components   United
    Contact: Mr.George Ferreira  
    Tel: 954-234-7783
    Fax: 954-622-9773
    (63)

About BSS101

PDF/DataSheet Download

Datasheet: BSS101

File Size: 81058 KB

Manufacturer: SIEMENS [Siemens Semiconductor Group]

Download : Click here to Download

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Related Part Number

BSS100 Parameters

Technical/Catalog InformationBSS100
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C220mA
Rds On (Max) @ Id, Vgs6 Ohm @ 220mA, 10V
Input Capacitance (Ciss) @ Vds 60pF @ 25V
Power - Max630mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs2nC @ 10V
Package / CaseTO-92
FET FeatureStandard
Drawing Number*
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names BSS100
BSS100

BSS100 General Description

These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance. This product is particularly suited to low voltage, low current applications, such as small servo motor controls, power MOSFET gate drivers, and other switching applications.

BSS100 Maximum Ratings

Symbol
Parameter
BSS100
BSS123
Units
VDSS
Drain-Source Voltage
100
V
VDGR
Drain-Gate Voltage (RGS < 20KW)
100
V
VGSS
Gate-Source Voltage - Continuous ± 14 V
- Non Repetitive (TP < 50 mS)
± 14
V
± 20
ID
Drain Current - Continuous 0.22 0.17 A
- Pulsed
0.22
0.17
A
0.9
0.68
PD
Total Power Dissipation @ TA = 25°C
0.63
0.36
W
TJ,TSTG
Operating and Storage Temperature Range
-55 to 150
°C
TL
Maximum Lead Temperature for Soldering
Purposes, 1/16" from Case for 10 Seconds
300
°C
THERMAL CHARACTERISTICS
RJA
Thermal Resistacne, Junction-to-Ambient
200
350
°C/W

BSS100 Features

·BSS100: 0.22A, 100V. RDS(ON) = 6W @ VGS = 10V. BSS123: 0.17A, 100V. RDS(ON) = 6W @ VGS = 10V
·High density cell design for extremely low RDS(ON).
·Voltage controlled small signal switch.
·Rugged and reliable.

BSS101 Maximum Ratings

Parameter
Symbol
Values
Unit
Drain source voltage
VDS
240
V
Drain-gate voltage
RGS = 20 kW
VDGR
240
Gate source voltage
VGS
± 14
Gate-source peak voltage,aperiodic
Vgs
± 20
Continuous drain current
TA = 33 °C
ID
0.13
A
DC drain current, pulsed
TA = 25 °C
Dpuls
0.52
Power dissipation
TA = 25 °C
Ptot
0.63
W

BSS101 Features

• N channel
• Enhancement mode
• Logic Level
• VGS(th) = 0.8...2.0V

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