MFG:Fairchild Semiconductor (VA) Category:Discrete Semiconductor Products Package Cooled:Sot-23 D/C:09+
BSS123, BSS123 E6327, BSS123 E6327 Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor (VA)
Package Cooled: Sot-23
D/C: 09+
Description: MOSFET N-CH 100V170MA SOT-23
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PDF/DataSheet Download
Datasheet: BSS123
File Size: 79299 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: BSS100
File Size: 291374 KB
Manufacturer: SIEMENS [Siemens Semiconductor Group]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: BSS100
File Size: 291374 KB
Manufacturer: SIEMENS [Siemens Semiconductor Group]
Download : Click here to Download
| Technical/Catalog Information | BSS123 |
| Vendor | Fairchild Semiconductor (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 170mA |
| Rds On (Max) @ Id, Vgs | 6 Ohm @ 170mA, 10V |
| Input Capacitance (Ciss) @ Vds | 73pF @ 25V |
| Power - Max | 360mW |
| Packaging | Digi-Reel? |
| Gate Charge (Qg) @ Vgs | 2.5nC @ 10V |
| Package / Case | SOT-23 |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | BSS123 BSS123 BSS123NDKR ND BSS123NDKRND BSS123NDKR |
These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance. This product is particularly suited to low voltage, low current applications, such as small servo motor controls, power MOSFET gate drivers, and other switching applications.
| Part Number | BSS123 |
| Config/ Polarity | N |
| PD (W) | 3 |
| VDSS (V) | 100 |
| VGSS (+/-) (V) | 20 |
| ID (A) | 0.17 |
| RDS(on) Max(Ω) @ VGS; 2.4V | |
| RDS(on) Max(Ω) @ VGS; 2.5V | |
| RDS(on) Max(Ω) @ VGS; 2.6V | |
| RDS(on) Max(Ω) @ VGS; 3V | |
| RDS(on) Max(Ω) @ VGS; 4.3V | |
| RDS(on) Max(Ω) @ VGS; 4.5V | 10 |
| RDS(on) Max(Ω) @ VGS; 5V | |
| RDS(on) Max(Ω) @ VGS; 6V | |
| RDS(on) Max(Ω) @ VGS; 10.0V | 6 |
| VGS(th) (V) | 2.8 |
| Ciss (typ) (pF) | 29 |
| Qg (typ) (nC) @ VGS;4.5V | |
| Qg (typ) (nC) @ VGS; 10V |
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