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BSS138LT1, BSS138LT1G, BSS138N

Table of contents:
Info of BSS138LT1
Info of BSS138LT1G
Info of BSS138N

BSS138LT1, BSS138LT1G, BSS138N Selling Leads, Datasheet

MFG:ON Semiconductor (VA) Category:Discrete Semiconductor Products Package Cooled:Sot-23 D/C:09+

BSS138LT1, BSS138LT1G, BSS138N Datasheet download

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Part Number: BSS138LT1

Category: Discrete Semiconductor Products

MFG: ON Semiconductor (VA)

Package Cooled: Sot-23

D/C: 09+

Description: MOSFET N-CH 50V 200MA SOT-23

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BSS138LT1 Parameters

Technical/Catalog Information	BSS138LT1
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	50V
Current - Continuous Drain (Id) @ 25° C	200mA
Rds On (Max) @ Id, Vgs	3.5 Ohm @ 200mA, 5V
Input Capacitance (Ciss) @ Vds	50pF @ 25V
Power - Max	225mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	-
Package / Case	SOT-23-3, TO-236-3, Micro3?, SSD3, SST3
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	BSS138LT1 BSS138LT1 BSS138LT1OSTR ND BSS138LT1OSTRND BSS138LT1OSTR

BSS138LT1 General Description

Typical applications are DC−DC converters, power management in portable and battery−powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.

BSS138LT1 Maximum Ratings

Rating	Symbol	Value	Unit
Drain−to−Source Voltage	V_DSS	50	Vdc
Gate−to−Source Voltage − Continuous	V_GS	± 20	Vdc
Drain Current − Continuous @ T_A= 25°C − Pulsed Drain Current (tp 3 10 s)	I_D I_DM	200 800	mA
Total Power Dissipation @ T_A= 25°C	P_D	225	mW
Operating and Storage Temperature Range	T_J, T_stg	− 55 to 150	°C
Thermal Resistance − Junction−to−Ambient	R_JA	556	°C/W
Maximum Lead Temperature for Soldering Purposes, for 10 seconds	T_L	260	°C

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.

BSS138LT1 Features

• Pb−Free Packages are Available
• Low Threshold Voltage (V_GS(th): 0.5 V−1.5 V) Makes it Ideal for Low Voltage Applications
• Miniature SOT−23 Surface Mount Package Saves Board Space

BSS138LT1G Parameters

Technical/Catalog Information	BSS138LT1G
Vendor	ON Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	50V
Current - Continuous Drain (Id) @ 25° C	200mA
Rds On (Max) @ Id, Vgs	3.5 Ohm @ 200mA, 5V
Input Capacitance (Ciss) @ Vds	50pF @ 25V
Power - Max	225mW
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	-
Package / Case	SOT-23-3, TO-236-3, Micro3?, SSD3, SST3
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	BSS138LT1G BSS138LT1G BSS138LT1GOSDKR ND BSS138LT1GOSDKRND BSS138LT1GOSDKR

BSS138N Maximum Ratings

Parameter	Symbol	Conditions	Value	Unit
Continuous drain current	I_D	T _A=25	0.23	A
Continuous drain current	I_D	T _A=25	0.18
Pulsed drain current	I _D,pulse	T_A=25	0.92
Reverse diode dv /dt	dv /dt	I _D=0.23 A, V_DS=48 V, di /dt =200 A/s, T_j,max=150	6	kV/s
Gate source voltage	V_GS		±20	V
ESD sensitivity (HBM) as per MIL-STD 883			Class 1
Power dissipation	P_tot	T A=25	0.36	W
Operating and storage temperature	T_j, T_stg		-55 ... 150	°C
IEC climatic category; DIN IEC 68-1			55/150/56

BSS138N Features

• N-channel
• Enhancement mode
• Logic level
• dv /dt rated

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