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BSS209PW, BSS21, BSS22

Table of contents:
Info of BSS209PW
Info of BSS21
Info of BSS22

BSS209PW, BSS21, BSS22 Selling Leads, Datasheet

MFG:Infineon Technologies Category:Discrete Semiconductor Products Package Cooled:SOT-323 D/C:05+PB

BSS209PW, BSS21, BSS22 Datasheet download

Five Points

Part Number: BSS209PW

Category: Discrete Semiconductor Products

MFG: Infineon Technologies

Package Cooled: SOT-323

D/C: 05+PB

Description: MOSFET P-CH 20V 580MA SOT-323

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BSS209PW Parameters

Technical/Catalog Information	BSS209PW
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	580mA
Rds On (Max) @ Id, Vgs	550 mOhm @ 580mA, 4.5V
Input Capacitance (Ciss) @ Vds	89.9pF @ 15V
Power - Max	520mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	1.38nC @ 4.5V
Package / Case	SOT-323
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	BSS209PW BSS209PW BSS209PWINTR ND BSS209PWINTRND BSS209PWINTR

BSS209PW Maximum Ratings

Parameter	Symbol	Value	Unit
Continuous drain current A T_A= 25 °C T_A= 70 °C	I_D	-0.58 -0.46	A
Pulsed drain current T_A = 25 °C	I _{D puls}	-2.3	A
Avalanche energy, single pulse I_D = -0.33 A , V_DD = -25 V, R_GS= 25	E_AS	3.5	mJ
Reverse diode dv/dt I_S = -0.33 A, V_DS= -48 V, di/dt = 200 A/s, T_jmax = 150 °C	dv/dt	-6	kV/s
Gate source voltage	V_GS	±12	V
Power dissipation T_A = 25 °C	P_tot	0.52	W
Operating and storage temperature	T_j , T_stg	-55...+150	°C
IEC climatic category; DIN IEC 68-1		55/150/56

BSS209PW Features

• P-Channel
• Enhancement mode
• Super Logic Level (2.5 V rated)
• 150°C operating temperature
• Avalanche rated
• dv/dt rated

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