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N channel vertical power FET with charge pump, ground referenced CMOS compatible input, monolithically integrated in Smart SIPMOS® technology.
Providing embedded protective functions.
BTS452T Maximum Ratings
Parameter
Symbol
Value
Unit
Supply voltage
Vbb
52
V
Supply voltage for full short circuit protection
Vbb(SC)
50
Continuous input voltage
VIN
-10 ... +16
Load current (Short - circuit current, see page 5)
IL
self limited
mA
Current through input pin (DC)
IIN
±5
A
Operating temperature
Tj
-40 ...+150
Storage temperature
Tstg
-55...+150
Power dissipation 1)
Ptot
41.6
W
Inductive load switch-off energy dissipation1)2) single pulse Tj= 150 IL= 1A
EAS
150
mJ
Load dump protection5)VLoadDump6)= VA+ VS RI=2Ω, td=400ms, VIN= low or high, VA=13,5V RL= 13.5Ω RL= 27Ω
VLoaddump
73.5 88.5
V
Electrostatic discharge voltage(HumanBodyModel) according to ANSI EOS/ESD - S5.1 - 1993 ESD STM5.1 - 1998 Input pin All other pins
VESD
±1 ±5
kV
BTS452T Features
•Overload protection •Current limitation • Short circuit protection •Thermal shutdown with restart •Overvoltage protection (including load dump) •Fast demagnetization of inductive loads • Reverse battery protection with external resistor •CMOS compatible input •Loss of GND and loss of Vbb protection •ESD - Protection •Very low standby current
BTS452T Typical Application
•All types of resistive, inductive and capacitive loads •µC compatible power switch for 12 V, 24 V and 42 V DC applications •Replaces electromechanical relays and discrete circuits