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Part Number: BTS 120

 

 

 

 

 

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BTS 120 Maximum Ratings

Parameter Symbol Values Unit
Drain-source voltage VDS 100 V
Drain-gate voltage, RGS = 20 k VDGR 100
Gate-source voltage VGS ±20
Continuous drain current, TC = 25  C ID 19 A
ISO drain current ID-ISO 3.5
TC = 85  C, VDS = 10 V, VDS = 0.5 V
Pulsed drain current,  TC = 25  C ID puls 76
Short circuit current,  Tj = 55 ... + 150  C ISC 55
Short circuit dissipation,   Tj = 55 ... + 150  C PSCmax 800 W
VDS  50 V / VDS  15 V
Power dissipation Ptot 75
Operating and storage temperature range Tj, Tstg 55 ... + 150 C
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55/150/56
Thermal resistance K/W
Chip-case Rth JC 1.67
Chip-ambient Rth JA 75

BTS 120 Features

*N channel
*Logic level
*Temperature sensor with thyristor characteristic
*The drain pin is electrically shorted to the tab
 

BTS 120 Connection Diagram

BTS 120  Connection Diagram

BTS 120 datasheet

BTS100
PDF/DataSheet Download

  • Datasheet: BTS100
  • File Size: 447180 KB
  • Manufacturer: SIEMENS [Siemens Semiconductor Group]
  • Click here to Download

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BTS 120 Relative Products

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