Features: *P channel *Enhancement mode *Temperature sensor with thyristor characteristic *The drain pin is electrically shorted to the tabPinoutSpecifications Parameter Symbol Values Unit Drain-source voltage VDS -50 V Drain-gate voltage, RGS = 20 k VDGR -50 Gate-source vol...
BTS 100: Features: *P channel *Enhancement mode *Temperature sensor with thyristor characteristic *The drain pin is electrically shorted to the tabPinoutSpecifications Parameter Symbol Values Unit ...
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*P channel
*Enhancement mode
*Temperature sensor with thyristor characteristic
*The drain pin is electrically shorted to the tab
Parameter | Symbol | Values | Unit |
Drain-source voltage | VDS | -50 | V |
Drain-gate voltage, RGS = 20 k | VDGR | -50 | |
Gate-source voltage | VGS | ±20 | |
Continuous drain current, TC = 25 C | ID | -8.0 | A |
ISO drain current | ID-ISO | -1.5 | |
TC = 85 C, VDS = 10 V, VDS = 0.5 V | |||
Pulsed drain current, TC = 25 C | ID puls | -32 | |
Short circuit current, Tj = 55 ... + 150 C | ISC | -25 | |
Short circuit dissipation, Tj = 55 ... + 150 C | PSCmax | 500 | W |
VDS 50 V / VDS 15 V | |||
Power dissipation | Ptot | 40 | |
Operating and storage temperature range | Tj, Tstg | 55 ... + 150 | C |
DIN humidity category, DIN 40 040 | E | ||
IEC climatic category, DIN IEC 68-1 | 55/150/56 | ||
Thermal resistance | K/W | ||
Chip-case | Rth JC | 3.1 | |
Chip-ambient | Rth JA | 75 |