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BTS5240G, BTS5240L, BTS5241G

BTS5240G, BTS5240L, BTS5241G Selling Leads, Datasheet

MFG:Infineon Technologies (VA)  Category:Integrated Circuits (ICs)  Package Cooled:SOP20  D/C:03/04+

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BTS5240G, BTS5240L, BTS5241G Datasheet download

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Part Number: BTS5240L

Category: Integrated Circuits (ICs)

MFG: Infineon Technologies (VA)

Package Cooled: SOP20

D/C: 03/04+

Description: IC SWITCH PWR HISIDE DSO-12

 

 
 
 
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About BTS5240G

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Datasheet: BTS5240G

File Size: 1124851 KB

Manufacturer: INFINEON [Infineon Technologies AG]

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About BTS5240L

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Datasheet: BTS5240L

File Size: 486736 KB

Manufacturer: INFINEON [Infineon Technologies AG]

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About BTS100

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Datasheet: BTS100

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Manufacturer: SIEMENS [Siemens Semiconductor Group]

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BTS5240G Parameters

Technical/Catalog InformationBTS5240G
VendorInfineon Technologies
CategoryIntegrated Circuits (ICs)
Package / CaseDSO-20
Mounting TypeSurface Mount
TypeHigh Side
Voltage - Supply4.5 V ~ 28 V
On-State Resistance21 mOhm
Current - Output / Channel5.9A
Current - Peak Output50A
PackagingTape & Reel (TR)
Input TypeNon-Inverting
Number of Outputs2
Operating Temperature-40°C ~ 150°C
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names BTS5240G
BTS5240G

BTS5240G General Description

General description of the BTS5240G are:(1)N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology;(2)providing embedded protective functions;(3)extern adjustable current limitation.

The absolute maximum ratings of the BTS5240G can be summarized as:(1):the parameter is supply voltage,the symbol is Vbb,the values is 28,the unit is V;(2):the parameter is supply voltage for full short circuit protection Tj,start =-40 to +150,the symbol is Vbb,the values is 28,the unit is V;(3):the parameter is maximum voltage across DMOS,the symbol is VON,the values is 52,the unit is V;(4):the parameter is load dump protection VLoadDump = UA + Vs, UA = 13.5V RI = 2 , td = 400 ms; IN= low or high, RL = 2.25 RL = 6.8,the symbol is VLoad dump,the values is 40,53,the unit is V;(5):the parameter is operating temperature range,the symbol is Tj,the values is -40 to +150,the unit is ;(6):the parameter is storage temperature range,the symbol is Tstg,the values is -55 to +150,the unit is ;(7):the parameter is dynamical temperature rise at switching,the symbol is dT,the values is 60,the unit is K;(8):the parameter is power dissipation (DC) one channel active Ta = 85,the symbol is Ptot,the values is 1.4,the unit is W;(9):the parameter is continuous input voltage,the symbol is VIN,the values is -10 to 16,the unit is V;(10):the parameter is voltage at current limit adjustment pin,the symbol is VCLA,the values is -10 to 16,the unit is V;(11):the parameter is current limit adjustment current,the symbol is ICLA,the values is ±5.0,the unit is mA;(12):the parameter is current through input pin (DC),the symbol is IIN,the values is ±5.0,the unit is mA;(13):the parameter is current through sense (DC),the symbol is IIS,the values is -5 to 10,the unit is mA.

BTS5240G Connection Diagram

BTS5240L Parameters

Technical/Catalog InformationBTS5240L
VendorInfineon Technologies (VA)
CategoryIntegrated Circuits (ICs)
Package / CaseDSO-12
Mounting TypeSurface Mount
TypeHigh Side
Voltage - Supply4.5 V ~ 28 V
On-State Resistance21 mOhm
Current - Output / Channel6A
Current - Peak Output11A
PackagingCut Tape (CT)
Input TypeNon-Inverting
Number of Outputs2
Operating Temperature-40°C ~ 150°C
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names BTS5240L
BTS5240L
BTS5240LINCT ND
BTS5240LINCTND
BTS5240LINCT

BTS5240L General Description

• N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS® technology.
• Providing embedded protective functions.
• Extern adjustable current limitation.

BTS5240L Maximum Ratings

Parameter

Symbol

Value

Unit

Supply voltage (overvoltage protection see page 6) Vbb

281)

V

Supply voltage for full short circuit protection; Tj =-40 ...+150°C Vbb(SC)

282)

Maximum voltage across DMOS VON

52

Load dump protection3) VLoadDump4) = VA + VS; VA = 13,5 V
In = low or high; td = 400 ms; RI4) = 2
RL = 2.25
RL = 6.8
VLoaddump

40
53

Load current (Short - circuit current, see page 7) IL

IL(lim)5)

A

Operating temperature range Tj

-40...+150

°C

Storage temperature range Tstg

-55...+150

Dynamical temperature rise at switching dT

60

K

Power dissipation6) (DC), one channel active     TA = 85 °C Ptot

1,4

W

Maximal switchable inductance, single pulse
Vbb=12V, Tjstart=150°C;         (see diagrams on page 12)
IL = 6 A, EAS = 0.319 J, RL = 0 ,                 one channel:
IL = 12 A, EAS = 0.679 J, RL = 0 ,      two parallel channels:
ZL(s)

9.8
5.2

mH

Electrostatic discharge voltage                              IN:
(Human Body Model)                                           IS:
according to ANSI EOS/ESD - S5.1 - 1993 , ESD STM5.1 - 1998 OUT:
VESD

1.0
2.0
4.0

kV

Continuous input voltage VIN

-10...16

V

Voltage at current limit adjustment pin VCLA

-10...16

Current limit adjustment current ICLA

±5.0

mA

Current through input pin (DC) IIN

±5.0

Current through sense (DC)    (see page 11) IIS

-5...10

BTS5240L Typical Application

• All types of resistive, inductive and capacitive loads
• C compatible high-side power switch with diagnostic feedback for 12 V grounded loads
• Due to the adjustable current limitation best suitable for loads with high inrush currents, so as lamps
• Replaces electromechanical relays, fuses and discrete circuits

BTS5240L Connection Diagram

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