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General description of the BTS5240G are:(1)N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology;(2)providing embedded protective functions;(3)extern adjustable current limitation.
The absolute maximum ratings of the BTS5240G can be summarized as:(1):the parameter is supply voltage,the symbol is Vbb,the values is 28,the unit is V;(2):the parameter is supply voltage for full short circuit protection Tj,start =-40 to +150,the symbol is Vbb,the values is 28,the unit is V;(3):the parameter is maximum voltage across DMOS,the symbol is VON,the values is 52,the unit is V;(4):the parameter is load dump protection VLoadDump = UA + Vs, UA = 13.5V RI = 2 , td = 400 ms; IN= low or high, RL = 2.25 RL = 6.8,the symbol is VLoad dump,the values is 40,53,the unit is V;(5):the parameter is operating temperature range,the symbol is Tj,the values is -40 to +150,the unit is ;(6):the parameter is storage temperature range,the symbol is Tstg,the values is -55 to +150,the unit is ;(7):the parameter is dynamical temperature rise at switching,the symbol is dT,the values is 60,the unit is K;(8):the parameter is power dissipation (DC) one channel active Ta = 85,the symbol is Ptot,the values is 1.4,the unit is W;(9):the parameter is continuous input voltage,the symbol is VIN,the values is -10 to 16,the unit is V;(10):the parameter is voltage at current limit adjustment pin,the symbol is VCLA,the values is -10 to 16,the unit is V;(11):the parameter is current limit adjustment current,the symbol is ICLA,the values is ±5.0,the unit is mA;(12):the parameter is current through input pin (DC),the symbol is IIN,the values is ±5.0,the unit is mA;(13):the parameter is current through sense (DC),the symbol is IIS,the values is -5 to 10,the unit is mA.
• N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS® technology. • Providing embedded protective functions. • Extern adjustable current limitation.
BTS5240L Maximum Ratings
Parameter
Symbol
Value
Unit
Supply voltage (overvoltage protection see page 6)
Vbb
281)
V
Supply voltage for full short circuit protection; Tj =-40 ...+150°C
Vbb(SC)
282)
Maximum voltage across DMOS
VON
52
Load dump protection3) VLoadDump4) = VA + VS; VA = 13,5 V In = low or high; td = 400 ms; RI4) = 2 RL = 2.25 RL = 6.8
VLoaddump
40 53
Load current (Short - circuit current, see page 7)
IL
IL(lim)5)
A
Operating temperature range
Tj
-40...+150
°C
Storage temperature range
Tstg
-55...+150
Dynamical temperature rise at switching
dT
60
K
Power dissipation6) (DC), one channel active TA = 85 °C
Ptot
1,4
W
Maximal switchable inductance, single pulse Vbb=12V, Tjstart=150°C; (see diagrams on page 12) IL = 6 A, EAS = 0.319 J, RL = 0 , one channel: IL = 12 A, EAS = 0.679 J, RL = 0 , two parallel channels:
ZL(s)
9.8 5.2
mH
Electrostatic discharge voltage IN: (Human Body Model) IS: according to ANSI EOS/ESD - S5.1 - 1993 , ESD STM5.1 - 1998 OUT:
VESD
1.0 2.0 4.0
kV
Continuous input voltage
VIN
-10...16
V
Voltage at current limit adjustment pin
VCLA
-10...16
Current limit adjustment current
ICLA
±5.0
mA
Current through input pin (DC)
IIN
±5.0
Current through sense (DC) (see page 11)
IIS
-5...10
BTS5240L Typical Application
• All types of resistive, inductive and capacitive loads • C compatible high-side power switch with diagnostic feedback for 12 V grounded loads • Due to the adjustable current limitation best suitable for loads with high inrush currents, so as lamps • Replaces electromechanical relays, fuses and discrete circuits