MFG:Infineon Technologies Category:Integrated Circuits (ICs) Package Cooled:1965 D/C:4
BTS712M, BTS712N1, BTS712N-1 Datasheet download
Category: Integrated Circuits (ICs)
MFG: Infineon Technologies
Package Cooled: 1965
D/C: 4
Description: IC HISIDE PWR SWITCH 4CH PDSO-20
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PDF/DataSheet Download
Datasheet: BTS100
File Size: 447180 KB
Manufacturer: SIEMENS [Siemens Semiconductor Group]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: BTS712N1
File Size: 368976 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: BTS100
File Size: 447180 KB
Manufacturer: SIEMENS [Siemens Semiconductor Group]
Download : Click here to Download
| Technical/Catalog Information | BTS712N1 |
| Vendor | Infineon Technologies |
| Category | Integrated Circuits (ICs) |
| Package / Case | DSO-20 |
| Mounting Type | Surface Mount |
| Type | High Side |
| Voltage - Supply | 5 V ~ 34 V |
| On-State Resistance | 165 mOhm |
| Current - Output / Channel | 1.9A |
| Current - Peak Output | 7.5A |
| Packaging | Tape & Reel (TR) |
| Input Type | Non-Inverting |
| Number of Outputs | 4 |
| Operating Temperature | -40°C ~ 150°C |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | BTS712N1 BTS712N1 |
| Parameter |
Symbol |
Values |
Unit |
| Supply voltage (overvoltage protection see page 4) | Vbb |
43 |
V |
| Supply voltage for full short circuit protection Tj,start =-40 ...+150°C |
Vbb |
34 |
V |
| Load current (Short-circuit current, see page 5) | IL |
self-limited |
A |
| Load dump protection2) VLoadDump = UA + Vs, UA = 13.5 V RI3) = 2 , td = 200 ms; IN= low or high, each channel loaded with RL = 7.1, |
VLoad dump4) |
60 |
V |
| Operating temperature range Storage temperature range |
Tj Tstg |
-40 ...+150 |
°C |
| Power dissipation (DC)5 Ta = 25°C: (all channels active) Ta = 85°C: |
Ptot |
3.6 |
W |
| Inductive load switch-off energy dissipation, single pulse Vbb =12V, Tj,start =150°C5), IL = 1.9 A, ZL = 66 mH, 0 one channel: IL = 2.8 A, ZL = 66 mH, 0 two parallel channels: IL = 4.4 A, ZL = 66 mH, 0 four parallel channels: see diagrams on page 9 and page 10 |
EAS |
150 |
mJ |
| Electrostatic discharge capability (ESD) (Human Body Model) |
VESD |
1.0 |
kV |
| Input voltage (DC) Current through input pin (DC) Current through status pin (DC) see internal circuit diagram page 9 |
VIN IIN IST |
-10 ... +16 ±2.0 ±5.0 |
V mA |
| Thermal resistance junction - soldering point5),6) each channel: junction - ambient5) one channel active: all channels active: |
Rthjs Rthja |
16 44 35 |
K/W |
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