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• N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS® 80V technology. • Providing embedded protective functions • An array of resistors is integrated in order to reduce the external components
BTS723GW Maximum Ratings
Parameter
Symbol
Values
Unit
Supply voltage (overvoltage protection see page 6)
Vbb
58
V
Supply voltage for full short circuit protection Tj,start =-40 ...+150°C
Vbb
50
V
Output Voltage to Vbb
VON
70
V
Negative voltage slope at output
-dVOUT/dt
20
V/s
Load current (Short-circuit current, see page 7)
IL
IL(LIM)1)
A
Load dump protection2) VLoadDump = VA + Vs, VA = 27 V RI3)= 8,td= 200 ms, IN= low or high each channel loaded with RL = 20,
VLoaddump4)
70
V
Operating temperature range Storage temperature range
Tj Tstg
-40 ...+150 -55 ...+150
°C
Power dissipation (DC)5) Ta = 25°C: (all channels active) Ta = 85°C:
Ptot
3.0 1.6
W
Maximal switchable inductance, single pulse Vbb =12V, Tj,start =150°C5), IL = 2.5A, EAS = 110 mJ, 0 one channel: IL = 3.5A, EAS = 278 mJ, 0 two parallel channels:
ZL
23.0 30.0
mH
Electrostatic discharge capability (ESD) (Human Body Model)acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993 R=1.5k; C=100pF
VESD
1.0
kV
Input voltage (DC)
VIN
±42
V
Current through input pin (DC) Current through status pin (DC)
IIN IST
±2.0 ±2.0
mA
Status pull up voltage
VSPU
±42
V
BTS723GW Typical Application
• µC compatible high-side power switch with diagnostic feedback for 12V and 24V and 42Vgrounded loads • All types of resistive, inductive and capacitive loads • Most suitable for inductive loads • Replaces electromechanical relays, fuses and discrete circuits