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• N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS® technology. • Providing embedded protective functions
BTS736L2 Maximum Ratings
Parameter
Symbol
Values
Unit
Supply voltage (overvoltage protection see page 4)
Vbb
43
V
Supply voltage for full short circuit protection Tj,start =-40 ...+150°C
Vbb
24
V
Load current (Short-circuit current, see page 5)
IL
self-limited
A
Load dump protection1) VLoadDump = UA + Vs, UA = 13.5 V RI2)= 2,td= 200 ms, IN= low or high each channel loaded with RL = 9.0,
VLoaddump3)
60
V
Operating temperature range Storage temperature range
Tj Tstg
-40 ...+150 -55 ...+150
°C
Power dissipation (DC)4) Ta = 25°C: (all channels active) Ta = 85°C:
Ptot
3.8 2.0
W
Maximal switchable inductance, single pulse Vbb =12V, Tj,start =150°C4), IL = 4.0A, EAS = 296 mJ, 0 one channel: IL = 6.0A, EAS = 631 mJ, 0 two parallel channels:
ZL
19.9 17.5
mH
Electrostatic discharge capability (ESD) IN: (Human Body Model) ST: out to all other pins shorted: acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993 R=1.5k; C=100pF
VESD
1.0 4.0 8.0
kV
Input voltage (DC) Current through input pin (DC) Current through status pin (DC) see internal circuit diagram page 8
VIN IIN IST
-10 ... +16 ±2.0 ±5.0
V mA
BTS736L2 Typical Application
• µC compatible high-side power switch with diagnostic feedback for 5V, 12V and 24V grounded loads • All types of resistive, inductive and capacitve loads • Most suitable for loads with high inrush currents, so as lamps • Replaces electromechanical relays, fuses and discrete circuits