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BUV21N, BUV22, BUV22G

BUV21N, BUV22, BUV22G Selling Leads, Datasheet

MFG:ON Semiconductor  Category:Discrete Semiconductor Products  D/C:05+

BUV22 Picture

BUV21N, BUV22, BUV22G Datasheet download

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Part Number: BUV22

Category: Discrete Semiconductor Products

MFG: ON Semiconductor

Package Cooled:

D/C: 05+

Description: TRANS NPN 250V 40A BIPO TO-3

 

 
 
 
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About BUV10N

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Datasheet: BUV10N

File Size: 11227 KB

Manufacturer: SEME-LAB [Seme LAB]

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BUV22 Suppliers

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  • BUV22

  • Pack: TO Qty: 5000  Adddate: 2024-04-27
  • Inquire Now
  • Abenic   China
    Contact: Mr.Wong   MSN:abenic8@hotmail.com
    Tel: 86-755-83019622
    Fax: 86-755-83019622
    (334)

About BUV22

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Datasheet: BUV22

File Size: 141082 KB

Manufacturer: MOTOROLA [Motorola, Inc]

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About BUV10N

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Datasheet: BUV10N

File Size: 11227 KB

Manufacturer: SEME-LAB [Seme LAB]

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BUV22 Parameters

Technical/Catalog InformationBUV22
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)250V
Current - Collector (Ic) (Max)40A
Power - Max250W
DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 10A, 4V
Vce Saturation (Max) @ Ib, Ic1V @ 1A, 10A
Frequency - Transition8MHz
Current - Collector Cutoff (Max)3mA
Mounting TypeChassis Mount
Package / CaseTO-204, TO-3
PackagingTray
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names BUV22
BUV22

BUV22 Maximum Ratings

 Rating  Symbol  Value  Unit
 Collector-Emitter Voltage  VCEO(sus)  250  Vdc
 Collector-Base Voltage  VCBO  300  Vdc
 Emitter-Base Voltage  VEBO  7  Vdc
 Collector-Emitter Voltage(VBE=-1.5V)  VCEX  300  Vdc
 Collector-Emitter Voltage(RBE=-1.5V)  VCER  290  Vdc
 Collector-Current-Continuous
-Peak(pw10ms)
 IC
 ICM
 40
 50
 Adc
 Apk
 Base-Current continuous  IB  8  Adc
 Total Power Dissipation@TC=25  PD  250  Watts
 Operating and Storage Junction Temperature Range  TJ, Tstg  -65 to 200  

BUV22 Typical Application

*High DC current gain; hFE min.= 20 at IC= 10A
*Low VCE(sat) , VCE(sat) max. = 1.0 V at IC = 10 A
*Very fast switching times:
TFmax. = 0.35s at IC= 20 A

BUV22G Parameters

Technical/Catalog InformationBUV22G
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)250V
Current - Collector (Ic) (Max)40A
Power - Max250W
DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 10A, 4V
Vce Saturation (Max) @ Ib, Ic1V @ 1A, 10A
Frequency - Transition8MHz
Current - Collector Cutoff (Max)3mA
Mounting TypeChassis Mount
Package / CaseTO-204, TO-3
PackagingTray
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names BUV22G
BUV22G

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