BUV21

Transistor Polarity : NPN
Configuration : Single
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 7 V
DC Collector/Base Gain hfe Min : 20
Maximum Operating Temperature : + 200 C
Package / Case : TO-204
Packaging : Tray
Maximum DC Collector Current : 40 A
Collector- Emitter Voltage VCEO Max : 200 V
Maximum Operating Frequency : 8 MHz (Min)


Application

*High DC current gain; h_FEmin.= 20 at I_C=12 A
*Low V_CE(sat) , V_CE(sat)max. = 0.6 V at I_C= 8A
*Very fast switching times:
T_Fmax. = 0.4s at I_C= 25A





Specifications

Rating	Symbol	Value	Unit
Collector-Emitter Voltage	VCEO(sus)	200	Vdc
Collector-Base Voltage	VCBO	250	Vdc
Emitter-Base Voltage	VEBO	7	Vdc
Collector-Emitter Voltage(VBE=-1.5V)	VCEX	250	Vdc
Collector-Emitter Voltage(RBE=-1.5V)	VCER	240	Vdc
Collector-Current-Continuous -Peak(pw10ms)	IC ICM	40 50	Adc Apk
Base-Current continuous	IB	8	Adc
Total Power Dissipation@TC=25	PD	150	Watts
Operating and Storage Junction Temperature Range	TJ, Tstg	-65 to 200

Parameters:

Technical/Catalog Information	BUV21
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	200V
Current - Collector (Ic) (Max)	40A
Power - Max	250W
DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 12A, 2V
Vce Saturation (Max) @ Ib, Ic	600mV @ 1.2A, 12A
Frequency - Transition	8MHz
Current - Collector Cutoff (Max)	3mA
Mounting Type	Chassis Mount
Package / Case	TO-204, TO-3
Packaging	Tray
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	BUV21 BUV21