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BYV79-200, BYV79E-150, BYV79E-200

Table of contents:
Info of BYV79-200
Info of BYV79E-150
Info of BYV79E-200

BYV79-200, BYV79E-150, BYV79E-200 Selling Leads, Datasheet

MFG:PH Package Cooled:TO- D/C:08+

BYV79-200, BYV79E-150, BYV79E-200 Picture

BYV79-200, BYV79E-150, BYV79E-200 Datasheet download

Five Points

Part Number: BYV79-200

MFG: PH

Package Cooled: TO-

D/C: 08+

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BYV79-200 General Description

Glass passivated high efficiency rectifier diodes in a plastic envelope, featuring low forward voltage drop, ultra-fast recovery times and soft recovery characteristic. They are intended for use in switched mode power supplies and high frequency circuits in general where low conduction and switching losses are essential.

BYV79-200 Maximum Ratings

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
V_RRM	Peak repetitive reverse Voltage			200	V
V_RWM	Working peak reverse voltage			200	V
V_R	continuous reverse voltage			200	V
I _F(AV)	Average forward current2	square wave; = 0.5; Tmb 120 sinusoidal; a = 1.57;Tmb 122		14 12.7	A
I _F(RMS)	RMS forward current			20	A
I _FRM	repetitive peak forward current	t = 25 s; = 0.5;Tmb120		28	A
I_FSM	non-repetitive peak forward current	t = 10 ms t = 8.3 ms sinusoidal; with reapplied VRRMmax)		150 160	A

I²t	I²t for fusing	t = 10 ms		112	A²s
Tstg	storage temperature		-65	+175
Tj	operating junction temperature			+150

BYV79-200 Connection Diagram

BYV79E-150 General Description

Ultra-fast, epitaxial rectifier diodes intendedforuseasoutputrectifiers in high frequency switched mode power supplies.

The BYV79E series is supplied in the conventional leaded SOD59 (TO220AC) package.

BYV79E-150 Maximum Ratings

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
V_RRM	Peak repetitive reverse Voltage			150	V
V_RWM	Working peak reverse voltage			150	V
V_R	continuous reverse voltage	Tmb 145		150	V
I _F(AV)	Average rectified forward current 1	square wave; = 0.5; Tmb 120		14	A
I _FRM	Repetitive peak forward current per diode	t = 25 s; = 0.5; Tmb 120		28	A
I_FSM	non-repetitive peak forward current	t = 10 ms t = 8.3 ms sinusoidal; with reapplied VRRMmax)		150 160	A

I _RRM	Peak repetitive reverse surge current	tp = 2 s; = 0.001		0.2	A
I _RSM	Peak non-repetitive reverse surge current	tp = 100 s		0.2	A
Tstg	storage temperature		-40	+150
Tj	operating junction temperature			+150

BYV79E-150 Features

* Low forward volt drop
* Fast switching
* Soft recovery characteristic
* Reverse surge capability
* High thermal cycling performance
* Low thermal resistance

BYV79E-150 Connection Diagram

BYV79E-200 General Description

BYV79E-200 Maximum Ratings

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
V_RRM	Peak repetitive reverse Voltage			200	V
V_RWM	Working peak reverse voltage			200	V
V_R	continuous reverse voltage	Tmb 145		200	V
I _F(AV)	Average rectified forward current 1	square wave; = 0.5; Tmb 120		14	A
I _FRM	Repetitive peak forward current per diode	t = 25 s; = 0.5; Tmb 120		28	A
I_FSM	non-repetitive peak forward current	t = 10 ms t = 8.3 ms sinusoidal; with reapplied VRRMmax)		150 160	A

I _RRM	Peak repetitive reverse surge current	tp = 2 s; = 0.001		0.2	A
I _RSM	Peak non-repetitive reverse surge current	tp = 100 s		0.2	A
Tstg	storage temperature		-40	+150
Tj	operating junction temperature			+150

BYV79E-200 Features

* Low forward volt drop
* Fast switching
* Soft recovery characteristic
* Reverse surge capability
* High thermal cycling performance
* Low thermal resistance

BYV79E-200 Connection Diagram

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