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MFG:ST  D/C:2  

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Part Number: BYV10-40

 

MFG: ST

 

D/C: 2

Description: The BYV10-20 to BYV10-40 types are Schottky barrier diodes fabricated in planar technology, and encapsulated in SOD81 h...


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BYV10-40 General Description


The BYV10-20 to BYV10-40 types are Schottky barrier diodes fabricated in planar technology, and encapsulated in SOD81 hermetically sealed glass packages incorporating Implotec TM(1)  technology.

BYV10-40 Maximum Ratings

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VRRM repetitive peak reverse voltage 40 V
I F(AV) average forward current note 1

1

A
Tstg storage temperature -65 +150
Tj operating junction temperature see Fig.7 +125

BYV10-40 Features

* Low switching losses
* Fast recovery time
* Guard ring protected
* Hermetically sealed leaded glass package.

BYV10-40 Typical Application

* Low power, switched-mode power supplies
* Rectifying
* Polarity protection.

BYV10-40 Connection Diagram

BYV10-40  Connection Diagram

BYV10-40 datasheet

BYV10-40
PDF/DataSheet Download

  • Datasheet: BYV10-40
  • File Size: 74687 KB
  • Manufacturer: STMICROELECTRONICS [STMicroelectronics]
  • Click here to Download

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BYV10-40 Relative Products

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  • BYV10-20

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    The BYV10-20 to BYV10-40 types are Schottky barrier diodes fabricated in planar technology, and encapsulated in SOD81 hermetically sealed glass packages incorporating Implotec TM(1) technology.

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