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Part Number: BYV 10-60
Description: Metal to silicon rectifier diode in glass case featuring very low forward voltage drop and fast recovery time, intended...
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BYV 10-60
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DataSheet
General Description
BYV 10-60 General Description
Metal to silicon rectifier diode in glass case featuring very low forward voltage drop and fast recovery time, intended for low voltage switching mode power supply, polarity protection and high frequency circuits.
BYV 10-60 Maximum Ratings
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VRRM | repetitive peak reverse voltage | 60 | V | ||
| I F(AV) | average forward current | Tamb = 60 °C |
1 |
A | |
| IFSM | non-repetitive peak forward current | Tamb = 25°C tp = 10ms Tamb = 25°C tp = 300s |
20 40 |
A |
| TL | Maximum Lead Temperature for Soldering during 10s at 4mm from Case | 230 | |||
| Tstg | storage temperature | -65 | +150 | ||
| Tj | operating junction temperature | -65 | +125 |
BYV 10-60
PDF/DataSheet Download
- Datasheet: BYV 10-60
- File Size: 84008 KB
- Manufacturer: STMicro
- Click here to Download
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