CMT20N220, CMT20N50, CMT20N503P Selling Leads, Datasheet
MFG:CET Package Cooled:TO- D/C:05/06
CMT20N220, CMT20N50, CMT20N503P Datasheet download
Part Number: CMT20N220
MFG: CET
Package Cooled: TO-
D/C: 05/06
MFG:CET Package Cooled:TO- D/C:05/06
CMT20N220, CMT20N50, CMT20N503P Datasheet download
MFG: CET
Package Cooled: TO-
D/C: 05/06
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PDF/DataSheet Download
Datasheet: CMT20N220
File Size: 383967 KB
Manufacturer: ETC [ETC]
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PDF/DataSheet Download
Datasheet: CMT20N50
File Size: 184014 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: CMT02N60
File Size: 336790 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients.
Rating | Symbol | Value | Unit |
Drain to Current - Continuous - Pulsed |
ID IDM |
20 60 |
A |
Gate-to-Source Voltage - Continue - Non-repetitive |
VGS VGSM |
±20 ±40 |
V V |
Total Power Dissipation Derate above 25 |
PD | 250 2.00 |
W W/ |
Operating and Storage Temperature Range | TJ, TSTG | -55 to 150 | |
Single Pulse Drain-to-Source Avalanche Energy - TJ = 25 (VDD = 100V, VGS = 10V, IL = 20A, L = 1.38mH, RG = 25Ω) |
EAS | 276 | mJ |
Thermal Resistance - Junction to Case - Junction to Ambient |
JC JA |
0.50 40 |
/W |
Maximum Lead Temperature for Soldering Purposes, 1/8" from case for 10 seconds | TL | 260 |