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CMT10N10

Features: ·Avalanche Energy Specified·Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode·Diode is Characterized for Use in Bridge Circuits·IDSS and VDS(on) Specified at Elevated TemperaturePinoutSpecifications Parameter Symbol Limit Unit Gate-to-Sou...

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SeekIC No. : 004315026 Detail

CMT10N10: Features: ·Avalanche Energy Specified·Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode·Diode is Characterized for Use in Bridge Circuits·IDSS and VDS(on) Specified at...

CMT10N10 Data Sheet

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Part Number:
CMT10N10
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

·Avalanche Energy Specified
·Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
·Diode is Characterized for Use in Bridge Circuits
·IDSS and VDS(on) Specified at Elevated Temperature


Pinout

Connection Diagram


Specifications

Parameter
Symbol
Limit
Unit
Gate-to-Source Voltage - Continue
- Non-repetitive
VGS
±20
V
VGSM
±40
Drain to Current - Continuous
- Pulsed
ID
10
A
35
IDM
Total Power Dissipation
Derate above 25
PD
40
W
0.32
W/°C
Operating and Storage Temperature Range
TJ,TSTG
-55 to 150
°C
Single Pulse Drain-to-Source Avalanche Energy - TJ = 25 (VDD = 100V, VGS = 10V, IL = 10A, L = 1.38mH, RG = 25)
EAS
69
mJ
Thermal Resistance - Junction to Case
- Junction to Ambient
JC
JA
3.13
100
°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8" from case for 10 seconds
TL
260
°C



Description

This advanced MOSFET CMT10N10 is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, CMT10N10 are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients.




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