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CMT09N20

Features: ·Dynamic dv/dt Rating·Repetitive Avalanche Rated·Fast Switching·Ease of Paralleling·Simple Drive RequirementsSpecifications Rating SYMBOL VALUE UNITS Drain to Current - Continuous- Pulsed (Note 1) IDIDM 9.036 A Gate-to-Source Voltage - Continue VGS ±20 V Total Powe...

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SeekIC No. : 004315025 Detail

CMT09N20: Features: ·Dynamic dv/dt Rating·Repetitive Avalanche Rated·Fast Switching·Ease of Paralleling·Simple Drive RequirementsSpecifications Rating SYMBOL VALUE UNITS Drain to Current - Continuo...

CMT09N20 Data Sheet

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Part Number:
CMT09N20
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/30

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Product Details

Description



Features:

·Dynamic dv/dt Rating
·Repetitive Avalanche Rated
·Fast Switching
·Ease of Paralleling
·Simple Drive Requirements


Specifications

Rating SYMBOL VALUE UNITS
Drain to Current - Continuous
- Pulsed (Note 1)		 ID
IDM		 9.0
36		 A
Gate-to-Source Voltage - Continue VGS ±20 V
Total Power Dissipation
Derate above 25		 PD 74
0.59		 W
W/
Single Pulse Avalanche Energy (Note 2) EAS 56 mJ
Avalanche Current (Note 1) IAR 9.0
Repetitive Avalanche Energy (Note 1) EAR 7.4 mJ
Peak Diode Recovery dv/dt dv/dt 5.0 V/ns
Operating and Storage Temperature Range TJ, TSTG -55 to 150
Thermal Resistance - Junction to Case
- Junction to Ambient		 JC
JA		 1.70
62		 /W
Maximum Lead Temperature for Soldering Purposes, 1/8" from case for 10 seconds TL 300



Description

This Power MOSFET CMT09N20 is designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers.


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