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The CXK77B3610GB-6/7 is a high speed 1M bit Bi-CMOS synchronous statis RAM organized as 32768 words by 36 bits. This SRAM integrates input registers, high speed SRAM and write buffer onto a single monolithic IC and features the delayed write system to reduce the dead cycles.
CXK77B3610GB-6 Maximum Ratings
Item
Symbol
Rating
Unit
Supply voltage
VCC
0.5 to +4.6
V
Input voltage
VIN
0.5 to VCC +0.5 (4.6V max.)
V
Output voltage
VO
0.5 to VCC +0.5 (4.6V max.)
V
Allowable power dissipation
PD
TBD
W
operating temperature
Topr
0 to 70
°C
Strorage temperature
Tstg
55 to +150
°C
Soldering temperature ` time
Tsolder
235 ` 10
°C ` sec
CXK77B3610GB-6 Features
• Fast cycle time (Cycle) (Frequency) CXK77B3610GB-6 6ns 166MHz CXK77B3610GB-7 7ns 142MHz • Inputs and outputs are LVTTL/LVCMOS compatible • Single 3.3V power supply: 3.3V ± 0.15V • Byte-write possible • OE asynchronization • JTAG test circuit • Package 119TBGA • 3 kinds of synchronous operation mode Register-Register mode (R-R mode) Register-Flow Thru mode (R-F mode) Register-Latch mode (R-L mode)