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Part Number: CXK58512M

 

 

 

 

Description: The CXK58512TM/M is a high speed CMOS static RAM organized as 65536-words by 8 bits. A polysilicon TFT cell technology ...


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CXK58512M General Description


The CXK58512TM/M is a high speed CMOS static RAM organized as 65536-words by 8 bits. A polysilicon TFT cell technology realized extremely low stand-by current and higher data retention stability.
Special feature are low power consumption, high speed.

The CXK58512TM/M is a suitable RAM for portable equipment with battery back up.

CXK58512M Maximum Ratings

Item Symbol Rating Unit
Supply voltage VCC 0.5 to +4.6 V
Input voltage VIN 0.5*1 to VCC + 0.5 V
Input and output voltage VI/O 0.5*1 to VCC + 0.5 V
Allowable power dissipation PD 0.7 W
Operating temperature Topr 0 to +70 °C
Storage temperature Tstg 55 to +150 °C
Soldering temperature ` time Tsolder 235 ` 10 °C ` s

CXK58512M Features

• Fast access time (Access time)
   -55LL 55ns (Max.)
   -70LL 70ns (Max.)
   -10LL 100ns (Max.)
• Low standby current 10µA (Max.)
• Low data retention current 6µA (Max.)
• Single +5V supply: +5V ± 10%
• Low voltage data retention: 2.0V (Min.)
• Broad package line-up
   CXK58512TM 8mm ×20mm 32 pin TSOP package
   CXK58512M 525mil 32 pin SOP Package

CXK58512M Connection Diagram

CXK58512M  Connection Diagram

CXK58512M  Connection Diagram

CXK58512M datasheet

CXK58512M
PDF/DataSheet Download

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