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Part Number: CXK582000M

 

 

 

 

Description: The CXK582000TM/YM/M is a high speed CMOS static RAM organized as 262144-words by 8 bits.A polysilicon TFT cell...


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CXK582000M General Description


The CXK582000TM/YM/M is a high speed CMOS static RAM organized as 262144-words by 8 bits.

A polysilicon TFT cell technology realized extremely low stand-by current and higher data retention stability.

Special feature are low power consumption and high speed and board package line-up.

The CXK582000TM/YM/M is a suitable RAM for portable equipment with battery back up.

CXK582000M Maximum Ratings

Item Symbol Rating Unit
Supply voltage VCC 0.5 to +7.0 V
Input voltage VIN 0.5* to VCC +0.5
Input and output voltage VI/O 0.5* to VCC +0.5
Allowable power dissipation PD 0.7 W
Operating temperature Topr 0 to +70 °C
Storage temperature Tstg 55 to +150
Soldering temperature Tsolder 235 • 10 °C • s

CXK582000M Features

• Fast access time (Access time)
  -85LL 85ns (Max.)
  -10LL 100ns (Max.)
• Low standby current 40µA (Max.)
• Low data retention current 24µA (Max.)
• Single +5V supply: 4.5V to 5.5V.
• Low voltage date retention : 2.0V (Min.)
• Broad package line-up
  CXK582000TM/YM 8mm ×20mm 32 pin
  TSOP Package
  CXK582000M 525mil 32 pin
  SOP Package

CXK582000M Connection Diagram

CXK582000M  Connection Diagram

CXK582000M datasheet

CXK582000M
PDF/DataSheet Download

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