DG445B, DG445CJ, DG445CJ/DJ Selling Leads, Datasheet
MFG:Vishay Package Cooled:DIP-16 D/C:2010+
DG445B, DG445CJ, DG445CJ/DJ Datasheet download
Part Number: DG445B
MFG: Vishay
Package Cooled: DIP-16
D/C: 2010+
DG445B, DG445CJ, DG445CJ/DJ
- Table of contents:
Info of DG445B
Info of DG445CJ
Info of DG445CJ/DJ
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About DG445B
PDF/DataSheet Download
Datasheet: DG445B
File Size: 118333 KB
Manufacturer: VISAY [Vishay Siliconix]
Download : Click here to Download
About DG445CJ
PDF/DataSheet Download
Datasheet: DG445CJ
File Size: 81898 KB
Manufacturer: MAXIM [Maxim Integrated Products]
Download : Click here to Download
About DG401
PDF/DataSheet Download
Datasheet: DG401
File Size: 94431 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
DG445B General Description
The DG444B/445B are monolithic quad analog switches designed to provide high speed, low error switching of analog and audio signals. The DG444B/445B are upgrades to the original DG444/445.
Combing low on-resistance (45, typ.) with high speed (tON120 ns, typ.), the DG444B/445B are ideally suited for Data Acquisition, Communication Systems, Automatic Test Equipment, or Medical Instrumentation. Charge injection has been minimized on the drain for use in sample-and-hold circuits.
The DG444B/445B are built using Vishay Siliconix's high-voltage silicon-gate process. An epitaxial layer prevents latchup.
When on, each switch conducts equally well in both directions and blocks input voltages to the supply levels when off.
Combing low on-resistance (45, typ.) with high speed (tON120 ns, typ.), the DG444B/445B are ideally suited for Data Acquisition, Communication Systems, Automatic Test Equipment, or Medical Instrumentation. Charge injection has been minimized on the drain for use in sample-and-hold circuits.
The DG444B/445B are built using Vishay Siliconix's high-voltage silicon-gate process. An epitaxial layer prevents latchup.
When on, each switch conducts equally well in both directions and blocks input voltages to the supply levels when off.
DG445B Maximum Ratings
V+ to V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 V
GND to V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .25 V
Digital Inputsa VS, VD . . .. . . . .. . . . . . . . .. . . . .. . . .. . . .. . .. (V-) -2 V to (V+) +2 V
or 30 mA, whichever occurs first
Continuous Current (Any Terminal) .. . . . . . . . . .. . . . . . .. . . . . .. . . . . .. . . . 30 mA
Current, S or D (Pulsed 1 ms, 10% duty cycle) . . . .. . . .. . .. . .... .. .. . . .. . . 100 mA
Storage Temperature . . . . . . . . . . . . .. . . . . . . . . .. . .. . . . . .. . .. . . .. . -65 to 125
Power Dissipation (Package)b
16-Pin Plastic DIPc . . . . . . . . . . .. . . . . . . . .. . . . . . . . . .. . . . . . . . . . . .. . . 470 mW
16-Pin Narrow Body SOICd . . . . . . . .. . . . . . . .. . .. . . . . . . . .. . . . . .. . . . . 900 mW
QFN-16d . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . .. . . . . . . . . . . . 850 mW
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
GND to V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .25 V
Digital Inputsa VS, VD . . .. . . . .. . . . . . . . .. . . . .. . . .. . . .. . .. (V-) -2 V to (V+) +2 V
or 30 mA, whichever occurs first
Continuous Current (Any Terminal) .. . . . . . . . . .. . . . . . .. . . . . .. . . . . .. . . . 30 mA
Current, S or D (Pulsed 1 ms, 10% duty cycle) . . . .. . . .. . .. . .... .. .. . . .. . . 100 mA
Storage Temperature . . . . . . . . . . . . .. . . . . . . . . .. . .. . . . . .. . .. . . .. . -65 to 125
Power Dissipation (Package)b
16-Pin Plastic DIPc . . . . . . . . . . .. . . . . . . . .. . . . . . . . . .. . . . . . . . . . . .. . . 470 mW
16-Pin Narrow Body SOICd . . . . . . . .. . . . . . . .. . .. . . . . . . . .. . . . . .. . . . . 900 mW
QFN-16d . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . .. . . . . . . . . . . . 850 mW
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
DG445B Features
*Low On-Resistance: 45
*Low Power Consumption: 1.0 mW
*Fast Switching Action-tON: 120 ns
* Low Charge Injection
*TTL/CMOS Logic Compatible
*Low Power Consumption: 1.0 mW
*Fast Switching Action-tON: 120 ns
* Low Charge Injection
*TTL/CMOS Logic Compatible
DG445B Typical Application
Audio Switching
Data Acquisition
Sample-and-Hold Circuits
Communication Systems
Automatic Test Equipment
Medical Instruments
Data Acquisition
Sample-and-Hold Circuits
Communication Systems
Automatic Test Equipment
Medical Instruments
DG445B Connection Diagram
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