DS2013D, DS2016, DS2016-100 Selling Leads, Datasheet
MFG:DALLAS Package Cooled:SOP D/C:05+
DS2013D, DS2016, DS2016-100 Datasheet download

Part Number: DS2013D
MFG: DALLAS
Package Cooled: SOP
D/C: 05+
MFG:DALLAS Package Cooled:SOP D/C:05+
DS2013D, DS2016, DS2016-100 Datasheet download

MFG: DALLAS
Package Cooled: SOP
D/C: 05+
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PDF/DataSheet Download
Datasheet: DS2
File Size: 68288 KB
Manufacturer: Linear
Download : Click here to Download
PDF/DataSheet Download
Datasheet: DS2016
File Size: 260267 KB
Manufacturer: DALLAS [Dallas Semiconducotr]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: DS2016-100
File Size: 260267 KB
Manufacturer: DALLAS [Dallas Semiconducotr]
Download : Click here to Download
The DS2016 2k x 8 3V/5V Operation Static RAM is a 16,384-bit, low-power, fully static random accessmemory organized as 2048 words by 8 bits using CMOS technology. The device operates from a singlepower supply with a voltage input between 2.7 and 5.5 volts. The chip enable input (CE ) is used fordevice selection and can be used in order to achieve the minimum standby current mode, which facilitatesboth battery operated and battery backup applications. The device provides access times as fast as 100 ns
when operated from a 5-volt power supply input and also provides relatively good performance of 250 nsaccess while operating from a 3-volt input. The device maintains TTL-level inputs and outputs over theinput voltage range of 2.7 to 5.5 volts. The DS2016 is most suitable for low-power applications wherebattery operation or battery backup for nonvolatility is required. The DS2016 is a JEDEC-standard 2k x 8SRAM and is pin-compatible with ROM and EPROM of similar density.
|
SYMBOL |
PARAMETER |
RATING |
|
VCC |
Power Supply Voltage |
-0.3V to +7.0V |
|
VIN , VI/O |
Input, Input/Output Voltage |
-0.3 to VCC +0.3V |
|
TSTG |
Storage Temperature |
-55 to +125 |
|
TOPR |
Operating Temperature |
40 to +85 |
|
TSOLDER |
Soldering Temperature/Time |
260 for 10 seconds |

