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drivethe large capacitive loads (up to 500 pF) associated withMOS memory systems. A PNP input structure is employedto minimize input currents so that driver loading in largememory systems is reduced. The circuit employs Schottky-clamped transistors for high speed and TRI-STATE outputsfor bus operation.The DS1648/DS3648 has a 15X resistor in series with theoutputs to dampen transients caused by the fast-switching output. The DS1678/DS3678 has a direct, low impedanceoutput for use with or without an external resistor.
DS3648 Maximum Ratings
If Military/Aerospace specified devices are required please contact the National Semiconductor Sale Office/Distributors for availability and specifications. Supply Voltage.................................................... 7V Logical ''1'' Input Voltage ...........................7V Logical ''0'' Input Voltage b......................1.5V Storage Temperature Range b..........65to a150 Maximum Power Dissipation* at .......................25 Cavity Package .........................................1433 mW Molded Package .........................................1362 mW Lead Temperature (Soldering, 10 seconds) ..................................300 * Derate cavity package ..........................9.6 mW/ above ............................25; derate molded packag 10.9 mW/ above ...............................................25.
DS3648 Features
TRI-STATE outputs interface directly with system-bus Schottky-clamped for better ac performance PNP inputs to minimize input loading TTL compatible High-speed capacitive load drivers Built-in damping resistor (DS1648/DS3648 only)