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F2001, F2002, F2003T

F2001, F2002, F2003T Selling Leads, Datasheet

MFG:POLYFET  Package Cooled:TO-63S  D/C:98+

F2001, F2002, F2003T Picture

F2001, F2002, F2003T Datasheet download

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Part Number: F2001

 

MFG: POLYFET

Package Cooled: TO-63S

D/C: 98+

 

 

 
 
 
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F2001 Suppliers

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  • F2010901

  • D/C: 01+& Qty: 3 Note: BAND PASS FILTER F/RANGE  Adddate: 2024-04-29
  • Inquire Now
  • LEAD-TIMES   Israel
    Contact: Mr.eshel   MSN:eshelmali@hotmail.com
    Tel: 972-8-8699223
    Fax: 972-8-8699225
    (5)

About F2001

PDF/DataSheet Download

Datasheet: F2001

File Size: 38768 KB

Manufacturer: POLYFET [Polyfet RF Devices]

Download : Click here to Download

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F2002 Suppliers

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  • F2010901

  • D/C: 01+& Qty: 3 Note: BAND PASS FILTER F/RANGE  Adddate: 2024-04-29
  • Inquire Now
  • LEAD-TIMES   Israel
    Contact: Mr.eshel   MSN:eshelmali@hotmail.com
    Tel: 972-8-8699223
    Fax: 972-8-8699225
    (5)

About F2002

PDF/DataSheet Download

Datasheet: F2002

File Size: 38818 KB

Manufacturer: POLYFET [Polyfet RF Devices]

Download : Click here to Download

Related PDF Download

Related Part Number

F2003T Suppliers

More F2003T Suppliers

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  • F2010901

  • D/C: 01+& Qty: 3 Note: BAND PASS FILTER F/RANGE  Adddate: 2024-04-29
  • Inquire Now
  • LEAD-TIMES   Israel
    Contact: Mr.eshel   MSN:eshelmali@hotmail.com
    Tel: 972-8-8699223
    Fax: 972-8-8699225
    (5)

About F2000D

PDF/DataSheet Download

Datasheet: F2000D

File Size: 217154 KB

Manufacturer: OSRAM [OSRAM GmbH]

Download : Click here to Download

Related PDF Download

  • F2001

    File Size: 38768 KB

  • F2002

    File Size: 38818 KB

  • F2003

    File Size: 38512 KB

  • F2004

    File Size: 38816 KB

  • F2012

    File Size: 38460 KB

Related Part Number

F2001 General Description

Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.

Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features gold metal for greatly extended lifetime. Low output capacitance and high FT enhance broadband performance.

F2001 Maximum Ratings

Total
Device
Dissipation
Junction to
Case Thermal
Maximum
Junction Resistance
Storage
Temperature
DC Drain
Current Temperature
Drain to
Gate Voltage
Drain to
Source Voltage
Gate to
Source Voltage
20Watts 10/W 200 -65 to 150 0.8 A 70V 70V 30V

F2002 General Description

Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.

Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features gold metal for greatly extended lifetime. Low output capacitance and high FT enhance broadband performance.

F2002 Maximum Ratings

Total
Device
Dissipation
Junction to
Case Thermal
Maximum
Junction Resistance
Storage
Temperature
DC Drain
Current Temperature
Drain to
Gate Voltage
Drain to
Source Voltage
Gate to
Source Voltage
30Watts 6/W 200 -65 to 150 1.6 A 70V 70V 30V

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